PIC16LC770-E/SS Microchip Technology, PIC16LC770-E/SS Datasheet - Page 149
![IC MCU OTP 2KX14 A/D PWM 20SSOP](/photos/6/58/65895/150-20-ssop_sml.jpg)
PIC16LC770-E/SS
Manufacturer Part Number
PIC16LC770-E/SS
Description
IC MCU OTP 2KX14 A/D PWM 20SSOP
Manufacturer
Microchip Technology
Series
PIC® 16Cr
Specifications of PIC16LC770-E/SS
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
15
Program Memory Size
3.5KB (2K x 14)
Program Memory Type
OTP
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 6x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
20-SSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
PIC16LC770E/SS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC16LC770-E/SS
Manufacturer:
MICROCHIP
Quantity:
4 000
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15.0
Absolute Maximum Ratings †
Ambient temperature under bias................................................................................................................ .-55 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Maximum voltage between AV
Maximum voltage between AV
Voltage on MCLR with respect to V
Voltage on RA4 with respect to Vss ......................................................................................................... -0.3V to +10.5V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA and PORTB (combined).................................................................................200 mA
Maximum current sourced by PORTA and PORTB (combined) ...........................................................................200 mA
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: Pdis = V
2002 Microchip Technology Inc.
ELECTRICAL CHARACTERISTICS
DD
with respect to V
IK
OK
(V
DD
SS
I
(V
< 0 or V
pin ..............................................................................................................................250 mA
O
pin ...........................................................................................................................300 mA
DD
SS
< 0 or V
SS
and V
and V
I
SS
SS
> V
............................................................................................................ -0.3 to +7.5V
........................................................................................................ -0.3V to +8.5V
O
(except V
SS
DD
DD
> V
)
pins
pins
DD
)
DD
, MCLR and RA4) .......................................... -0.3V to (V
DD
x {I
PIC16C717/770/771
DD
-
I
OH
} +
{(V
DD
- V
OH
) x I
DS41120B-page 147
OH
} + (V
DD
O
+ 0.3V)
l x I
20 mA
20 mA
0.3V
0.3V
OL
).
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