PIC12C671-04/P Microchip Technology, PIC12C671-04/P Datasheet - Page 633

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PIC12C671-04/P

Manufacturer Part Number
PIC12C671-04/P
Description
IC MCU OTP 1KX14 A/D 8DIP
Manufacturer
Microchip Technology
Series
PIC® 12Cr
Datasheets

Specifications of PIC12C671-04/P

Program Memory Type
OTP
Program Memory Size
1.75KB (1K x 14)
Package / Case
8-DIP (0.300", 7.62mm)
Core Processor
PIC
Core Size
8-Bit
Speed
4MHz
Peripherals
POR, WDT
Number Of I /o
5
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 4x8b
Oscillator Type
Internal
Operating Temperature
0°C ~ 70°C
Processor Series
PIC12C
Core
PIC
Data Bus Width
8 bit
Data Ram Size
128 B
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
5
Number Of Timers
1
Operating Supply Voltage
3 V to 5.5 V
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
ICE2000
Minimum Operating Temperature
0 C
On-chip Adc
4-ch x 8-bit
Data Rom Size
128 B
Height
3.3 mm
Length
9.27 mm
Supply Voltage (max)
5.5 V
Supply Voltage (min)
3 V
Width
6.35 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
ISPICR1 - ADAPTER IN-CIRCUIT PROGRAMMINGAC124001 - MODULE SKT PROMATEII 8DIP/SOIC
Eeprom Size
-
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC12C671-04/P
Manufacturer:
MICROCHIP
Quantity:
6 700
31.3.6
31.3.7
1997 Microchip Technology Inc.
Tested Crystals and Their Capacitor Values
Example EPROM Memory Erase Times
This table shows the crystal frequency and manufacturer that was used for every tests in this sec-
tion, as well as the capacitor values/ranges that exhibited the best characteristics.
Table 31-2: Example Capacitor Selection for Crystal Oscillators
The UV erase time of an EPROM cell depends on the geometry size of the EPROM cell and the
manufacturing technology.
device.
Table 31-3: Example of Typical EPROM Erase Time Recommendations
Table 31-4:
Note 1: If these criteria are not met, the erase times will be different.
Note:
Example
Device
Crystals Used:
Section 31. Device Characteristics
1
2
3
4
Osc Type
200 kHz
20 MHz
32 kHz
1 MHz
4 MHz
8 MHz
HS
LP
XT
Higher capacitance increases the stability of the oscillator but also increases the start-up time.
These values are for design guidance only.
mode to avoid overdriving crystals with low drive level specification. Since each crystal has its
own characteristics, the user should consult the crystal manufacturer for appropriate values of
external components or verify oscillator performance.
Refer to the device data sheet for the typical erase times for a device.
(Angstroms)
Wavelength
2537
2537
2537
2537
Crystal Frequency
Table 31-3
200 kHz
200 kHz
20 MHz
EPSON CA-301 20.000M-C
32 kHz
1 MHz
4 MHz
4 MHz
8 MHz
EPSON CA-301 8.000M-C
Epson C-001R32.768K-A
STD XTL 200.000KHz
shows some of the expected erase times for each different
ECS ECS-10-13-1
ECS ECS-40-20-1
( W/cm
Intensity
12,000
12,000
12,000
12,000
Capacitor Range
2
)
Rs
may be required in HS mode as well as XT
47-68 pF
15-33 pF
15-33 pF
Distance from UV
C1
lamp (inches)
33 pF
15 pF
15 pF
15 pF
15 pF
1
1
1
1
Capacitor Range
DS31031A-page 31-21
Typical Time
20 PPM
20 PPM
50 PPM
50 PPM
30 PPM
30 PPM
47-68 pF
15-33 pF
15-33 pF
(minutes)
C2
15 - 20
33 pF
15 pF
15 pF
15 pF
15 pF
20
40
60
(1)
31

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