ATMEGA48V-10MMH Atmel, ATMEGA48V-10MMH Datasheet - Page 300

• Manufacturer Part Number: ATMEGA48V-10MMH
• Description: MCU AVR 4KB FLASH 20MHZ 28QFN
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA48V-10MMH

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 23
• Program Memory Size: 4KB (2K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Processor Series: ATMEGA48x
• Core: AVR8
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 10 MHz
• Operating Supply Voltage: 1.8 V to 5.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 27-17. Serial Programming Instruction Set (Hexadecimal values) (Continued)
Notes:
Figure 27-8. Serial Programming Instruction example
300
Instruction/Operation
Write EEPROM Memory Page (page access)
Write Lock bits
Write Fuse bits
Write Fuse High bits
Write Extended Fuse Bits
1. Not all instructions are applicable for all parts.
2. a = address.
3. Bits are programmed ‘0’, unprogrammed ‘1’.
4. To ensure future compatibility, unused Fuses and Lock bits should be unprogrammed (‘1’) .
5. Refer to the correspondig section for Fuse and Lock bits, Calibration and Signature bytes and Page size.
6. Instructions accessing program memory use a word address. This word may be random within the page range.
7. See htt://www.atmel.com/avr for Application Notes regarding programming and programmers.
ATmega48/88/168
Byte 1
Load Program Memory Page (High/Low Byte)/
Load EEPROM Memory Page (page access)
Bit 15 B
Byte 2
Adr MSB
Adr dr M
A
r MS S B
If the LSB in RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until
this bit returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, see
300.
Byte 3
Adr LSB
Page Offset
0
Serial Programming Instruction
Byte 4
Byte 1
$C2
$AC
$AC
$AC
$AC
Program Memory/
EEPROM Memory
Page Buffer
Page N-1
Page 0
Page 1
Page 2
Byte 1
0000 00aa
Byte 2
$E0
$A0
$A8
$A4
Page Number
Instruction Format
Bit 15 B
Write Program Memory Page/
Write EEPROM Memory Page
Byte 2
Adr MSB
aaaa aa00
Byte 3
$00
$00
$00
$00
Byte 3
Adr LSB
A A dr dr LS
LSB
SB
Figure 27-8 on page
0
data byte in
data byte in
data byte in
data byte in
Byte 4
2545S–AVR–07/10
Byte 4
$00