PIC16F616-E/P Microchip Technology, PIC16F616-E/P Datasheet - Page 104
![IC PIC MCU FLASH 2KX14 14DIP](/photos/6/59/65935/150-14-dip_sml.jpg)
PIC16F616-E/P
Manufacturer Part Number
PIC16F616-E/P
Description
IC PIC MCU FLASH 2KX14 14DIP
Manufacturer
Microchip Technology
Series
PIC® 16Fr
Datasheets
1.PIC12F609T-ISN.pdf
(26 pages)
2.PIC16F616T-ISL.pdf
(4 pages)
3.PIC16F616T-ISL.pdf
(214 pages)
4.PIC16F616T-ISL.pdf
(8 pages)
5.PIC16F616-ESL.pdf
(180 pages)
Specifications of PIC16F616-E/P
Program Memory Type
FLASH
Program Memory Size
3.5KB (2K x 14)
Package / Case
14-DIP (0.300", 7.62mm)
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
11
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
128 B
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
11
Number Of Timers
3
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
Height
3.3 mm
Length
19.05 mm
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2 V
Width
6.35 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
MCP1631RD-DCPC1 - REF DES BATT CHARG OR LED DRIVERAC162083 - HEADER MPLAB ICD2 PIC16F616 8/14
Eeprom Size
-
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
- PIC12F609T-ISN PDF datasheet
- PIC16F616T-ISL PDF datasheet #2
- PIC16F616T-ISL PDF datasheet #3
- PIC16F616T-ISL PDF datasheet #4
- PIC16F616-ESL PDF datasheet #5
- Current page: 104 of 180
- Download datasheet (3Mb)
PIC16F610/616/16HV610/616
10.4.6
In half-bridge applications where all power switches are
modulated at the PWM frequency, the power switches
normally require more time to turn off than to turn on. If
both the upper and lower power switches are switched
at the same time (one turned on, and the other turned
off), both switches may be on for a short period of time
until one switch completely turns off. During this brief
interval, a very high current (shoot-through current) will
flow through both power switches, shorting the bridge
supply. To avoid this potentially destructive shoot-
through current from flowing during switching, turning
on either of the power switches is normally delayed to
allow the other switch to completely turn off.
In Half-Bridge mode, a digitally programmable dead-
band delay is available to avoid shoot-through current
from destroying the bridge power switches. The delay
occurs at the signal transition from the non-active state
to the active state. See Figure 10-16 for illustration.
The lower seven bits of the associated PWM1CON
register (Register 10-3) sets the delay period in terms
of microcontroller instruction cycles (T
FIGURE 10-17:
DS41288C-page 102
Standard Half-Bridge Circuit (“Push-Pull”)
PROGRAMMABLE DEAD-BAND
DELAY MODE
EXAMPLE OF HALF-BRIDGE APPLICATIONS
CY
or 4 T
P1A
P1B
OSC
).
Preliminary
FET
Driver
FET
Driver
FIGURE 10-16:
P1A
P1B
td = Dead-Band Delay
Note 1: At this time, the TMR2 register is equal to the
(2)
(2)
V+
V-
(1)
2: Output signals are shown as active-high.
td
Pulse Width
PR2 register.
Load
Period
td
EXAMPLE OF HALF-
BRIDGE PWM OUTPUT
© 2007 Microchip Technology Inc.
+
V
-
+
V
-
(1)
Period
(1)
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