MCIMX513DJM8C Freescale Semiconductor, MCIMX513DJM8C Datasheet - Page 28

• Manufacturer Part Number: MCIMX513DJM8C
• Description: MULTIMEDIA PROC 529-LFBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX51r

Specifications of MCIMX513DJM8C

• Core Processor: ARM Cortex-A8
• Core Size: 32-Bit
• Speed: 800MHz
• Connectivity: 1-Wire, EBI/EMI, Ethernet, I²C, IrDA, MMC, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: ROMless
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 0.8 V ~ 1.15 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 529-LFBGA
• Processor Series: i.MX51
• Core: ARM Cortex A8
• Data Bus Width: 32 bit
• Program Memory Size: 36 KB
• Data Ram Size: 128 KB
• Interface Type: I2C, SPI, SSI, UART, USB
• Maximum Clock Frequency: 200 MHz
• Number Of Timers: 5
• Operating Supply Voltage: 0.8 V to 1.15 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: MCIMX51EVKJ
• Minimum Operating Temperature: - 20 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1
2
3
4
Electrical Characteristics
4.3.5
The DC Electrical Characteristics listed below are guaranteed using operating ranges per
otherwise noted.
28
Input Hysteresis
Schmitt trigger VT+
Schmitt trigger VT–
Input current (no pull-up/down)
Input current (22 kΩ Pull-up)
Input current (75 kΩ Pull-up)
Input current (100 kΩ Pull-up)
Input current (360 kΩ Pull-down)
Keeper Circuit Resistance
Low-level output voltage
High-Level DC input voltage
Low-Level DC input voltage
Input Hysteresis
Schmitt trigger VT+
Schmitt trigger VT–
I/O leakage current (no pull-up)
level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s.
Overshoot and undershoot conditions (transitions above OVDD and below OVSS) on switching pads must be held below 0.6
V, and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/undershoot must
be controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other
methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
I/O leakage currents are listed in
To maintain a valid level, the transitioning edge of the input must sustain a constant slew rate (monotonic) from the current DC
Table 22. I
DC Electrical Characteristics
Parameter
I
2
C I/O DC Parameters
2
C Standard/Fast/High-Speed Mode Electrical Parameters for Low/Medium Drive Strength
See the errata for HS-I2C in i.MX51 Chip Errata document. The two
standard I
2,4
2,3
1,2
1,2
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
Table 21. UHVIO DC Electrical Characteristics (continued)
1
2
1
C modules have no errata.
Table
Symbol
VHYS
VT+
VT–
VIH
VIL
Vol
Iin
25.
Test Conditions
VI = OVDD or 0
Symbol
VHYS
VT+
VT–
Iol = 3 mA
Iin
Iin
Iin
Iin
Iin
—
—
—
—
—
—
NOTE
High voltage mode
Low voltage mode
Test Conditions
Vin = OVDD
Vin = OVDD
Vin = 0
Vin = 0
Vin = 0
Vin = 0
0.7 × OVDD
0.5 × OVDD
NA
—
—
0.25
Min
—
—
—
0
0.5OVDD
Typ
0.38
0.95
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.3 × OVDD
0.5 × OVDD
See Note
Typ
17
—
—
—
—
—
—
—
—
Freescale Semiconductor
OVDD
Max
0.4
—
—
0.5 × OVDD
Table
See Note
3
Max
0.43
1.33
202
5.7
61
47
—
—
13, unless
Unit
4
—
V
V
V
V
V
V
Unit
kΩ
μA
μA
μA
μA
—
V
V
V