M30620FCPGP#U5C Renesas Electronics America, M30620FCPGP#U5C Datasheet - Page 287
M30620FCPGP#U5C
Manufacturer Part Number
M30620FCPGP#U5C
Description
IC M16C MCU FLASH 128K 100LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/60r
Datasheets
1.QSK-62P_PLUS.pdf
(103 pages)
2.M30622SAFPU5.pdf
(308 pages)
3.M30620SPGPU3C.pdf
(423 pages)
Specifications of M30620FCPGP#U5C
Core Processor
M16C/60
Core Size
16-Bit
Speed
24MHz
Connectivity
I²C, IEBus, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
100-LQFP
Package
100LQFP
Family Name
M16C
Maximum Speed
24 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
16|32 Bit
Number Of Programmable I/os
87
Interface Type
UART
On-chip Adc
26-chx10-bit
On-chip Dac
2-chx8-bit
Number Of Timers
11
For Use With
867-1000 - KIT QUICK START RENESAS 62PR0K33062PS001BE - R0K33062P STARTER KITR0K33062PS000BE - KIT EVAL STARTER FOR M16C/62PM3062PT3-CPE-3 - EMULATOR COMPACT M16C/62P/30P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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M16C/62P Group (M16C/62P, M16C/62PT)
Rev.2.41
REJ09B0185-0241
22. Flash Memory Version
Aside from the built-in flash memory, the flash memory version microcomputer has the same functions as the masked
ROM version.
In the flash memory version, the flash memory can perform in three rewrite modes: CPU rewrite mode, standard serial
I/O mode and parallel I/O mode.
Table 22.1 lists specifications of the flash memory version. See Table 1.1 to Table 1.3 Performance outline of
M16C/62PT group for the items not listed in Table 22.1.
Table 22.1
NOTES:
Flash Memory Rewrite Mode
Erase Block
Program Method
Erase Method
Program and Erase Control Method
Protect Method
Number of Commands
Program and Erase Endurance
Data Retention
ROM Code Protection
1. The boot ROM area contains a standard serial I/O mode rewrite control program which is stored in it
2. Can be programmed in byte units in only parallel input/output mode.
3. Block 1 and block A are 10,000 times of programming and erasure. All other blocks are 1,000 times
4. Definition of program and erase endurance
when shipped from the factory. This area can only be rewritten in parallel input/output mode.
of programming and erasure.
The programming and erasure times are defined to be per-block erasure times. For example,
assume a case where a 4-Kbyte block A is programmed in 2,048 operations by writing one word at
a time and erased thereafter.
In this case, the block is reckoned as having been programmed and erased once.
If a product is 100 times of programming and erasure, each block in it can be erased up to 100
times. When 10,000 times of programming and erasure, block 1 and block A can each be erased
up to 10,000 times. All other blocks can each be erased up to 1,000 times.
Jan 10, 2006
Flash Memory Version Specifications
Item
User ROM Area
Boot ROM Area
Page 270 of 390
3 modes (CPU rewrite, standard serial I/O, parallel I/O)
See Figure 22.1 Flash Memory Block Diagram
1 block (4 Kbytes)
In units of word, in units of byte
Collective erase, block erase
Program and erase controlled by software command
The lock bit protects each block
8 commands
10 years
Parallel I/O and standard serial I/O modes are supported
100 times, 1,000 times/10,000 times (option)
(1)
Specification
(2)
22. Flash Memory Version
(3, 4)
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