PIC18LF4431-I/P Microchip Technology, PIC18LF4431-I/P Datasheet - Page 84
![IC PIC MCU FLASH 8KX16 40DIP](/photos/6/61/66192/150-40-dip_sml.jpg)
PIC18LF4431-I/P
Manufacturer Part Number
PIC18LF4431-I/P
Description
IC PIC MCU FLASH 8KX16 40DIP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC16F818-ISO.pdf
(6 pages)
3.PIC18F2331-ISO.pdf
(392 pages)
4.PIC18F2331-ISO.pdf
(8 pages)
5.PIC18F2331-ISO.pdf
(6 pages)
6.PIC18F2331-ISO.pdf
(16 pages)
7.PIC18LF2331-ISO.pdf
(4 pages)
8.PIC18LF2331-ISO.pdf
(40 pages)
9.PIC18F4331-EP.pdf
(400 pages)
Specifications of PIC18LF4431-I/P
Core Size
8-Bit
Program Memory Size
16KB (8K x 16)
Oscillator Type
Internal
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, Power Control PWM, QEI, POR, PWM, WDT
Number Of I /o
36
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 9x10b
Operating Temperature
-40°C ~ 85°C
Package / Case
40-DIP (0.600", 15.24mm)
Controller Family/series
PIC18
No. Of I/o's
36
Eeprom Memory Size
256Byte
Ram Memory Size
768Byte
Cpu Speed
40MHz
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
EUSART, I2C, SPI, SSP
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
36
Number Of Timers
1 x 8
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
9 bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18LF4431-I/P
Manufacturer:
Microchip Technology
Quantity:
135
Company:
Part Number:
PIC18LF4431-I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
- PIC16F616T-ISL PDF datasheet
- PIC16F818-ISO PDF datasheet #2
- PIC18F2331-ISO PDF datasheet #3
- PIC18F2331-ISO PDF datasheet #4
- PIC18F2331-ISO PDF datasheet #5
- PIC18F2331-ISO PDF datasheet #6
- PIC18LF2331-ISO PDF datasheet #7
- PIC18LF2331-ISO PDF datasheet #8
- PIC18F4331-EP PDF datasheet #9
- Current page: 84 of 400
- Download datasheet (7Mb)
PIC18F2331/2431/4331/4431
6.4
The minimum erase block size is 32 words or 64 bytes
under firmware control. Only through the use of an
external programmer, or through ICSP control can
larger blocks of program memory be bulk erased. Word
erase in Flash memory is not supported.
When initiating an erase sequence from the micro-
controller itself, a block of 64 bytes of program memory
is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased.
TBLPTR<5:0> are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash pro-
gram memory. The CFGS bit must be clear to access
program Flash and data EEPROM memory. The
WREN bit must be set to enable write operations. The
FREE bit is set to select an erase operation. The WR
bit is set as part of the required instruction sequence
(as shown in Example 6-2), and starts the actual erase
operation. It is not necessary to load the TABLAT
register with any data, as it is ignored.
For protection, the write initiate sequence using
EECON2 must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
EXAMPLE 6-2:
DS39616C-page 82
Required
Sequence
Erasing Flash Program Memory
ERASE_ROW
ERASING A FLASH PROGRAM MEMORY ROW
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
NOP
BSF
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, EEPGD
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON2, WR
INTCON, GIE
Preliminary
; load TBLPTR with the base
; address of the memory block
; point to Flash program memory
; enable write to memory
; enable Row Erase operation
; disable interrupts
; write 55H
; write 0AAH
; start erase (CPU stall)
; re-enable interrupts
6.4.1
The sequence of events for erasing a block of internal
program memory location is:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Load Table Pointer with address of row being
erased.
Set the EECON1 register for the erase
operation:
- set EEPGD bit to point to program
- clear the CFGS bit to access program
- set WREN bit to enable writes;
- set FREE bit to enable the erase.
Disable interrupts.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit. This will begin the row erase
cycle.
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
Execute a NOP.
Re-enable interrupts.
memory;
memory;
FLASH PROGRAM MEMORY
ERASE SEQUENCE
© 2007 Microchip Technology Inc.
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