MC908AP32CBE Freescale Semiconductor, MC908AP32CBE Datasheet - Page 44

• Manufacturer Part Number: MC908AP32CBE
• Description: IC MCU 32K FLASH 8MHZ 42DIP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908AP32CBE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: I²C, IRSCI, SCI, SPI
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 30
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 42-DIP (0.600", 15.24mm)
• Controller Family/series: HC08
• No. Of I/o's: 30
• Ram Memory Size: 2KB
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: I2C, SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08AP
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 32
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Development Tools By Supplier: FSICEBASE, DEMO908AP64E, M68CBL05CE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Memory
2.5.4 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
2.5.5 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80 or $XXC0. Use the following procedure to program a row
of FLASH memory.
44
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Write any data to any FLASH location within the FLASH memory address range.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Write any data to any FLASH location within the address range of the row to be programmed.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the FLASH location to be programmed.
7. Wait for time, t
8. Repeat steps 6 and 7 until all bytes within the row are programmed.
9. Clear the PGM bit.
address and data for programming.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Due to the relatively long mass erase time, user should take care in the
code to prevent a COP reset from happening while the HVEN bit is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
rcv
rcv
(Figure 2-4
(1 µs), the memory can be accessed in read mode again.
(1 µs), the memory can be accessed in read mode again.
prog
me
nvh
nvs
nvh1
nvs
pgs
(200 ms). (See NOTE below.)
(20 µs to 40 µs).
(5 µs).
(5 µs).
(5 µs).
(10 µs).
(100 µs).
shows a flowchart of the programming algorithm.)
MC68HC908AP Family Data Sheet, Rev. 4
NOTE
NOTE
Freescale Semiconductor