STM8L151C4T6 STMicroelectronics, STM8L151C4T6 Datasheet - Page 82
STM8L151C4T6
Manufacturer Part Number
STM8L151C4T6
Description
IC MCU 8BIT 16KB FLASH 48LQFP
Manufacturer
STMicroelectronics
Series
STM8L EnergyLiter
Specifications of STM8L151C4T6
Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, IR, POR, PWM, WDT
Number Of I /o
41
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 25x12b, D/A 1x12
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
STM8L15x
Core
STM8
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
41
Number Of Timers
5
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWSTM8
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 25 Channel
On-chip Dac
12 bit, 1 Channel
For Use With
497-10594 - DEM FOR STM8L15X LOW PWR MODES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10517
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8L151C4T6
Manufacturer:
STMicroelectronics
Quantity:
500
Company:
Part Number:
STM8L151C4T6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM8L151C4T6
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STM8L151C4T6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical parameters
9.3.5
Table 36.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
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Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Memory characteristics
T
Table 35.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
RM
RAM and hardware registers
Parameter
Data retention mode
A
A
A
A
= –40 to +85 °C
= –40 to +125 °C
= –40 to +85 °C
= –40 to +125 °C
Parameter
Doc ID 15962 Rev 6
(1)
Halt mode (or Reset)
T
T
A
A
T
T
=+25 °C, V
=+25 °C, V
T
f
A
A
SYSCLK
Conditions
A
T
T
T
T
= –40 to +105 °C
= –40 to +125 °C
RET
RET
= –40 to +85 °C
RET
RET
Conditions
(7 suffix) or
(6 suffix),
(3 suffix)
= +125 °C
= +125 °C
= +85 °C
= +85 °C
= 16 MHz
DD
DD
= 3.0 V
= 1.8 V
1.65
Min
STM8L151xx, STM8L152xx
300
30
30
10
1.65
Min
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Typ
Typ
0.7
6
3
Max
Max
3.6
(1)
kcycles
years
Unit
Unit
mA
ms
ms
V
V