STM8L151C4T6 STMicroelectronics, STM8L151C4T6 Datasheet - Page 108
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STM8L151C4T6
Manufacturer Part Number
STM8L151C4T6
Description
IC MCU 8BIT 16KB FLASH 48LQFP
Manufacturer
STMicroelectronics
Series
STM8L EnergyLiter
Specifications of STM8L151C4T6
Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, IR, POR, PWM, WDT
Number Of I /o
41
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 25x12b, D/A 1x12
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
STM8L15x
Core
STM8
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
41
Number Of Timers
5
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWSTM8
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 25 Channel
On-chip Dac
12 bit, 1 Channel
For Use With
497-10594 - DEM FOR STM8L15X LOW PWR MODES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10517
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8L151C4T6
Manufacturer:
STMicroelectronics
Quantity:
500
Company:
Part Number:
STM8L151C4T6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM8L151C4T6
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STM8L151C4T6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical parameters
108/122
Table 58.
1. Not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 59.
1. Data based on characterization results, not tested in production.
Static latch-up
●
Table 60.
V
V
Symbol
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
LU: 3 complementary static tests are required on 6 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
Symbol
LU
Peak level
EMI data
ESD absolute maximum ratings
Electrical sensitivities
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
Parameter
Static latch-up class
(1)
Ratings
V
T
LQFP32
conforming to
IEC61967-2
A
DD
= +25 °C,
= 3.6 V,
Conditions
Doc ID 15962 Rev 6
Parameter
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
frequency band
Monitored
Conditions
T
A
= +25 °C
STM8L151xx, STM8L152xx
Max vs.
16 MHz
Maximum
value
-3
9
2
2000
4
Class
500
II
(1)
dBμV
Unit
Unit
V
-