ATMEGA16-16AU Atmel, ATMEGA16-16AU Datasheet - Page 275

• Manufacturer Part Number: ATMEGA16-16AU
• Description: IC AVR MCU 16K 16MHZ 5V 44TQFP
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA16-16AU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 32
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TQFP, 44-VQFP
• Processor Series: ATMEGA16x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: JTAG, SPI, UART
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 32
• Number Of Timers: 3
• Operating Supply Voltage: 4.5 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Cpu Family: ATmega
• Device Core: AVR
• Device Core Size: 8b
• Frequency (max): 16MHz
• Total Internal Ram Size: 1KB
• # I/os (max): 32
• Number Of Timers - General Purpose: 3
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Package Type: TQFP
• For Use With: ATSTK600-TQFP44 - STK600 SOCKET/ADAPTER 44-TQFPATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAG770-1005 - ISP 4PORT FOR ATMEL AVR MCU JTAG770-1004 - ISP 4PORT FOR ATMEL AVR MCU SPIATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEMATSTK500 - PROGRAMMER AVR STARTER KIT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Polling Flash
Data Polling EEPROM
2466T–AVR–07/10
4. The Flash is programmed one page at a time. The
5. The EEPROM array is programmed one byte at a time by supplying the address and data
6. Any memory location can be verified by using the Read instruction which returns the con-
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
When a page is being programmed into the Flash, reading an address location within the page
being programmed will give the value $FF. At the time the device is ready for a new page, the
programmed value will read correctly. This is used to determine when the next page can be writ-
ten. Note that the entire page is written simultaneously and any address within the page can be
used for polling. Data polling of the Flash will not work for the value $FF, so when programming
this value, the user will have to wait for at least t
a chip erased device contains $FF in all locations, programming of addresses that are meant to
contain $FF, can be skipped. See
When a new byte has been written and is being programmed into EEPROM, reading the
address location being programmed will give the value $FF. At the time the device is ready for a
new byte, the programmed value will read correctly. This is used to determine when the next
byte can be written. This will not work for the value $FF, but the user should have the following in
mind: As a chip erased device contains $FF in all locations, programming of addresses that are
meant to contain $FF, can be skipped. This does not apply if the EEPROM is re-programmed
without chip erasing the device. In this case, data polling cannot be used for the value $FF, and
the user will have to wait at least t
for t
WD_EEPROM
262
address and data together with the Load Program Memory Page instruction. To ensure
correct loading of the page, the data Low byte must be loaded before data High byte is
applied for a given address. The Program Memory Page is stored by loading the Write
Program Memory Page instruction with the 7 MSB of the address. If polling is not used,
the user must wait at least t
Accessing the SPI Serial Programming interface before the Flash write operation com-
pletes can result in incorrect programming.
together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling is not used, the user must wait
at least t
no $FFs in the data file(s) need to be programmed.
tent at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
. The memory page is loaded one byte at a time by supplying the 6 LSB of the
CC
WD_EEPROM
power off.
value.
before issuing the next byte. (See
WD_FLASH
Table 115
WD_EEPROM
before issuing the next page. (See
for t
before programming the next byte. See
WD_FLASH
WD_FLASH
page size is found in
Table
before programming the next page. As
value
115). In a chip erased device,
ATmega16(L)
Table 107 on page
Table
115).
Table 115
275