SMP50-100 STMicroelectronics, SMP50-100 Datasheet - Page 5

• Manufacturer Part Number: SMP50-100
• Description: TRISIL 100V BIDIRECT SMA
• Manufacturer: STMicroelectronics
• Series: TRISIL™r

Specifications of SMP50-100

• Voltage - Reverse Standoff (typ): 90V
• Voltage - Breakdown: 100V
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -

SMP50 / SMTPA / TPA
Figure 3.
Figure 5.
Figure 7.
1.10
1.05
1.00
0.95
0.90
1E+2
1E+0
50
20
10
1E+1
1E-1
5
2
1
-40
0
I (A)
V
T
1E-3
270 V
BO
62 V
Z
th(j-a)
[T ] / V
1
j
-20
(°C/W)
1E-2
BO
2
On-state voltage versus on-state
current (typical values)
Relative variation of breakover
voltage versus junction
temperature
Variation of thermal impedance
junction to ambient versus pulse
duration (Printed circuit board FR4,
S
layout)
Cu
[T =25°C]
j
0
= 35 µm, recommended pad
3
1E-1
SMTPA / TPA
4
20
V (V)
T (°C)
T
j
t (s)
p
5
1E+0
SMP50
40
6
1E+1
7
60
8
1E+2
80
T =25°C
j
9
5E+2
100
10
Figure 4.
Figure 6.
Figure 8.
2.5
2.0
1.5
1.0
0.5
0.0
2000
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
10
-40
1
C[V ] / C[V =50V]
1
I [T ] / I [T =25°C]
H
25
I
RM
R
j
V =V
[T ] / I
R
-20
2
H
j
RM
j
R
Relative variation of holding
current versus junction
temperature
Relative variation of leakage
current versus reverse voltage
applied (typical values)
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
RM
[T =25°C]
0
50
5
j
20
10
V (V)
T (°C)
T (°C)
R
j
j
40
75
20
60
50
Characteristics
80
100
100
V
F=1MHz
T =25°C
RMS
j
100
=1V
5/11
120
300
125