PESD24VS2UQ,115 NXP Semiconductors, PESD24VS2UQ,115 Datasheet - Page 4

• Manufacturer Part Number: PESD24VS2UQ,115
• Description: DIODE ESD PROTECTION SOT663
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD24VS2UQ,115

• Package / Case: SOT-663
• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 26.5V
• Power (watts): 150W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 36 V
• Operating Voltage: 24 V
• Breakdown Voltage: 27 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 150 W
• Capacitance: 50 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.7 mm W x 1.7 mm L x 0.6 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057838115; PESD24VS2UQ T/R; PESD24VS2UQ T/R

NXP Semiconductors
ESD maximum ratings
Notes
1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.
2. Measured across either pins 1 and 3 or pins 2 and 3.
ESD standards compliance
ESD
IEC 61000-4-2; level 4 (ESD); see Fig.3
HBM MIL-Std 883; class 3
Double ESD protection diodes
in SOT663 package
handbook, halfpage
Fig.2
SYMBOL
(%)
120
I pp
80
40
0
8/20 s pulse waveform according to
IEC 61000-4-5.
0
ESD STANDARD
electrostatic discharge
capability
10
100 % I pp ; 8 s
PARAMETER
e
t
20
50 % I pp ; 20 s
30
t ( s)
MLE218
Rev. 03 - 11 September 2008
40
IEC 61000-4-2 (contact discharge);
notes 1 and 2
HBM MIL-Std 883
>15 kV (air); > 8 kV (contact)
>4 kV
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESDxS2UQ series
Fig.3
CONDITIONS
100 %
10 %
90 %
I
pp
ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
CONDITIONS
t
r
30 ns
0.7 to 1 ns
PESDxS2UQ series
60 ns
Product specification
VALUE
30
30
30
30
23
10
001aaa191
4 of 13
t
UNIT
kV
kV
kV
kV
kV
kV