PESD5Z3.3,115 NXP Semiconductors, PESD5Z3.3,115 Datasheet - Page 7

• Manufacturer Part Number: PESD5Z3.3,115
• Description: DIODE ESD PROTECT UNI SOD-523
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD5Z3.3,115

• Package / Case: SC-79, SOD-523
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5V
• Power (watts): 260W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 10 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5 V
• Peak Surge Current: 20 A
• Peak Pulse Power Dissipation: 260 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 0.85(Max) mm W x 1.25(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061264115; PESD5Z3.3 T/R; PESD5Z3.3 T/R

NXP Semiconductors
PESD5ZX_SER_2
Product data sheet
Fig 5. Diode capacitance as a function of reverse
Fig 7. Relative variation of reverse current as a
I
R(25 C)
(pF)
(1) PESD5Z2.5
(2) PESD5Z3.3
(3) PESD5Z5.0
C
I
10
R
250
200
150
100
d
50
10
0
1
1
f = 1 MHz; T
voltage; typical values
PESD5Z2.5; V
PESD5Z3.3; V
I
PESD5Z5.0; V
PESD5Z6.0; V
PESD5Z7.0; V
PESD5Z12; V
function of junction temperature; typical values
100
R
0
is less than 50 nA at 150 C for:
1
50
amb
RWM
RWM
RWM
RWM
RWM
RWM
= 25 C
= 12.0 V
2
0
= 2.5 V
= 3.3 V
= 5.0 V
= 6.0 V
= 7.0 V
(1)
50
3
(2)
100
4
006aab057
006aab059
V
T
j
R
( C)
(V)
(3)
150
5
Rev. 02 — 4 April 2008
Low capacitance unidirectional ESD protection diodes
Fig 6. Diode capacitance as a function of reverse
Fig 8. V-I characteristics for a unidirectional
(1) PESD5Z6.0
(2) PESD5Z7.0
(3) PESD5Z12
(pF)
C
100
d
V
80
60
40
20
CL
0
f = 1 MHz; T
voltage; typical values
ESD protection diode
0
V
BR
V
RWM
amb
P-N
PESD5Zx series
4
= 25 C
+
(1)
(2)
I
8
I
I
I
RM
R
PP
© NXP B.V. 2008. All rights reserved.
V
R
006aab058
(V)
006aaa407
(3)
12
V
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