SD12T1G ON Semiconductor, SD12T1G Datasheet - Page 3

• Manufacturer Part Number: SD12T1G
• Description: TVS ZENER 350W 12V ESD SOD323
• Manufacturer: ON Semiconductor

Specifications of SD12T1G

• Voltage - Reverse Standoff (typ): 12V
• Voltage - Breakdown: 13.3V
• Power (watts): 350W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323, UMD2
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 25 V
• Operating Voltage: 12 V
• Breakdown Voltage: 13.3 V
• Termination Style: SMD/SMT
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 350 W
• Capacitance: 150 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.25 mm W x 1.7 mm L
• Dc: 07+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SD12T1GOS; SD12T1GOS; SD12T1GOSTR

1000
100
280
100
260
240
220
200
180
160
140
120
10
−55
100
90
80
70
60
50
40
30
20
10
0
0
Figure 1. SD05 Typical Capacitance versus Bias
0
−35
0.5
Figure 3. SD05 Typical Leakage Current
25
−15
1
Figure 5. Pulse Derating Curve
T
A
, AMBIENT TEMPERATURE (°C)
50
5
1.5
TEMPERATURE (°C)
versus Temperature
25
75
2
BIAS (V)
Voltage
45
2.5
100
65
3
125
85
3.5
TYPICAL CHARACTERISTICS
150
105
4
125 145
http://onsemi.com
175
SD05T1 Series
4.5
200
5
3
140
120
100
80
60
40
20
100
0.1
100
0
10
90
80
70
60
50
40
30
20
10
−55
1
0
0
0
Figure 2. SD12 Typical Capacitance versus
t
r
−30
Figure 4. SD12 Typical Leakage Current
t
P
2
Figure 6. 8 × 20 ms Pulse Waveform
PEAK VALUE I
−5
20
versus Temperature
4
TEMPERATURE (°C)
20
HALF VALUE I
Bias Voltage
BIAS (V)
RSM
t, TIME (ms)
6
PULSE WIDTH (t
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
45
40
@ 8 ms
RSM
70
/2 @ 20 ms
8
P
95
) IS DEFINED
60
10
120
145
12
80