SMP50-130 STMicroelectronics, SMP50-130 Datasheet - Page 5
![TRISIL 130V BIDIRECT SMA](/photos/1/38/13837/497-do-214ac_sml.jpg)
SMP50-130
Manufacturer Part Number
SMP50-130
Description
TRISIL 130V BIDIRECT SMA
Manufacturer
STMicroelectronics
Series
TRISIL™r
Type
TRIACr
Datasheet
1.TPA200RL.pdf
(11 pages)
Specifications of SMP50-130
Voltage - Reverse Standoff (typ)
117V
Voltage - Breakdown
130V
Polarization
Bidirectional
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Repetitive Peak Off-state Volt
130V
Off-state Voltage
130V
Hold Current
150mA
Package Type
DO-214AC
Peak Repeat Off Current
5uA
Peak Surge On-state Current (max)
16A
Mounting
Surface Mount
Pin Count
2
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Lead Free Status / Rohs Status
Compliant
Other names
497-6525-2
SMP50-130
SMP50-130
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SMP50-130
Manufacturer:
ST
Quantity:
54 000
Company:
Part Number:
SMP50-130
Manufacturer:
ST
Quantity:
5 288
SMP50 / SMTPA / TPA
Figure 3.
Figure 5.
Figure 7.
1.10
1.05
1.00
0.95
0.90
1E+2
1E+0
50
20
10
1E+1
1E-1
5
2
1
-40
0
I (A)
V
T
1E-3
270 V
BO
62 V
Z
th(j-a)
[T ] / V
1
j
-20
(°C/W)
1E-2
BO
2
On-state voltage versus on-state
current (typical values)
Relative variation of breakover
voltage versus junction
temperature
Variation of thermal impedance
junction to ambient versus pulse
duration (Printed circuit board FR4,
S
layout)
Cu
[T =25°C]
j
0
= 35 µm, recommended pad
3
1E-1
SMTPA / TPA
4
20
V (V)
T (°C)
T
j
t (s)
p
5
1E+0
SMP50
40
6
1E+1
7
60
8
1E+2
80
T =25°C
j
9
5E+2
100
10
Figure 4.
Figure 6.
Figure 8.
2.5
2.0
1.5
1.0
0.5
0.0
2000
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
10
-40
1
C[V ] / C[V =50V]
1
I [T ] / I [T =25°C]
H
25
I
RM
R
j
V =V
[T ] / I
R
-20
2
H
j
RM
j
R
Relative variation of holding
current versus junction
temperature
Relative variation of leakage
current versus reverse voltage
applied (typical values)
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
RM
[T =25°C]
0
50
5
j
20
10
V (V)
T (°C)
T (°C)
R
j
j
40
75
20
60
50
Characteristics
80
100
100
V
F=1MHz
T =25°C
RMS
j
100
=1V
5/11
120
300
125