SMLVT3V3 STMicroelectronics, SMLVT3V3 Datasheet - Page 2

• Manufacturer Part Number: SMLVT3V3
• Description: DIODE TRANSIL LOW VOLT SMB
• Manufacturer: STMicroelectronics
• Series: TRANSIL™r

Specifications of SMLVT3V3

• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 4.1V
• Power (watts): 600W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 10.3 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 64.4 V
• Termination Style: SMD/SMT
• Peak Surge Current: 40 A
• Peak Pulse Power Dissipation: 600 W
• Capacitance: 5200 pF
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 3.95 (Max) mm W x 4.6 (Max) mm L
• Capacitance, Junction: 5200 pF
• Current, Reverse: 1 mA
• Current, Surge: 100 A
• Package Type: DO-214AA (SMB)
• Power Dissipation: 600 W
• Primary Type: Module
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +175 °C
• Voltage, Reverse: 3.3 V
• Number Of Elements: 1
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 4.1V
• Reverse Stand-off Voltage: 3.3V
• Leakage Current (max): 200uA
• Peak Pulse Current: 200A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 175C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2496-2

Characteristics
1
2/7
Figure 1.
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
P [Tj initial = 25° C]
PP
P [Tj initial]
PP
25
Peak pulse power dissipation
versus initial junction temperature
(printed circuit board)
Characteristics
Table 2.
1. Pulse test : t
2. V
3. VR = 0 V, F = 1 MHz
Symbol
Symbol
R
SMLVT3V3
R
V
50
V
V
I
th(j-a)
I
R
th(j-l)
V
RM
PP
RM
BR
BR
CL
T
F
D
Type
= T x (T
75
Tj initial (°C)
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ VRM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic impedance
Thermal resistances
100
p
amb
< 50 ms
Max
200
I
µA
RM
-25) x V
125
@V
150
Parameter
RM
3.3
BR (25°C)
V
175
Min
V
4.1
BR
V
200
@I
mA
R
1
Parameter
(1)
Figure 2.
Max
10/1000 µs
7.3
100.0
V
V
10.0
1.0
0.1
CL
1.0E-03
@I
PP
50
A
Peak pulse power versus
exponential pulse duration
1.0E-02
Max
V
V
10.3
CL
CL
V
V
V
V
8/20 µs
CL
BR
BR
V
V
@I
RM
RM
t r
1.0E-01
200
t
PP
P
A
(ms)
I
I
F
F
I
I
t p
Repetitive pulse current
t r = rise time (µs)
t p = pulse duration time (µs)
I
I
I
I
RM
RM
I
I
PP
PP
R
R
Max
10-4/° C
V
V
F
F
-5.3
1.0E+00
T
(2)
Value
T
100
j
20
initial = 25 °C
V
V
SMLVT3V3
Typ.
1.0E+01
5200
C
° C/W
° C/W
pF
Unit
(3)