PESD5V0L6US,118 NXP Semiconductors, PESD5V0L6US,118 Datasheet - Page 5

• Manufacturer Part Number: PESD5V0L6US,118
• Description: DIODE 6FOLD ESD PROTECT 8-SOIC
• Manufacturer: NXP Semiconductors
• Type: TVSr
• Series: -r

Specifications of PESD5V0L6US,118

• Package / Case: 8-SOIC (3.9mm Width)
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.8V
• Power (watts): 35W
• Polarization: 6 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 15 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.4 V
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 35 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 4(Max) mm W x 5(Max) mm L
• Number Of Elements: 6
• Package Type: SO
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6.4V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 25nA
• Peak Pulse Current: 2.5A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 8
• Capacitance Value: 19 pF
• Maximum Clamping Voltage: 15 V
• Direction Type: Uni-Directional
• Number Of Elements Per Chip: 6
• Esd Protection Voltage: 10@HBM|20@Contact Disc KV
• Maximum Leakage Current: 0.025 uA
• Maximum Working Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4520-2; 934057934118; PESD5V0L6US /T3; PESD5V0L6US /T3

NXP Semiconductors
6. Characteristics
Table 9.
T
[1]
[2]
PESD5V0L6UAS_US_3
Product data sheet
Symbol
Per diode
V
I
V
V
r
C
RM
dif
amb
RWM
(CL)R
(BR)
d
Non-repetitive current pulse 8/20 s exponentially decay waveform according to IEC 61000-4-5; see
Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.
= 25 C unless otherwise specified
Characteristics
Parameter
reverse stand-off voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
Conditions
V
I
I
I
I
V
see
PP
PP
R
R
RWM
R
= 1 mA
= 1 mA
= 0 V; f = 1 MHz;
= 1 A
= 2.5 A
PESD5V0L6UAS; PESD5V0L6US
Figure 5
= 5 V
Rev. 03 — 18 August 2009
Low capacitance 6-fold ESD protection diode arrays
[1][2]
[1][2]
Min
-
-
-
-
6.4
-
-
Typ
-
8
-
-
6.8
-
16
Figure
1.
Max
5
25
10
15
7.2
100
19
© NXP B.V. 2009. All rights reserved.
Unit
V
nA
V
V
V
pF
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