PESD5V0X1BL,315 NXP Semiconductors, PESD5V0X1BL,315 Datasheet

DIODE ESD PROT BI-DIR 5V SOD-882

PESD5V0X1BL,315

Manufacturer Part Number
PESD5V0X1BL,315
Description
DIODE ESD PROT BI-DIR 5V SOD-882
Manufacturer
NXP Semiconductors
Datasheets

Specifications of PESD5V0X1BL,315

Package / Case
SOD-882
Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
7.5V
Polarization
Bidirectional
Mounting Type
Surface Mount
Polarity
Bidirectional
Channels
1 Channel
Operating Voltage
5 V
Breakdown Voltage
7.5 V
Termination Style
SMD/SMT
Capacitance
0.9 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Dimensions
1.35 mm W x 2.7 mm L x 1.1 mm H
Number Of Elements
1
Package Type
SOD-882
Operating Temperature Classification
Military
Reverse Breakdown Voltage
6V
Reverse Stand-off Voltage
5V
Leakage Current (max)
100nA
Test Current (it)
5mA
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4674-2
934061649315
PESD5V0X1BL T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
Table 1.
I
I
I
I
I
I
I
I
I
Table 2.
T
Type number
PESD5V0X1BA
PESD5V0X1BL
Symbol
Per diode
V
C
amb
RWM
d
PESD5V0X1BA; PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 4 November 2008
Bidirectional ESD protection of one line
Ultra low diode capacitance: C
Very low leakage current: I
USB interfaces
Antenna protection
10/100/1000 Mbit/s Ethernet
FireWire
High-speed data lines
Subscriber Identity Module (SIM) card
protection
= 25 C unless otherwise specified.
Parameter
reverse standoff voltage
diode capacitance
Product overview
Quick reference data
Package
NXP
SOD323
SOD882
RM
= 1 nA
d
= 0.9 pF
Conditions
f = 1 MHz; V
I
I
I
I
I
I
I
I
JEITA
SC-76
-
R
ESD protection up to 9 kV
IEC 61000-4-2; level 4 (ESD)
AEC-Q101 qualified
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
= 0 V
Min
-
-
Package configuration
very small
leadless ultra small
Typ
-
0.9
Product data sheet
Max
5
1.3
Unit
V
pF

Related parts for PESD5V0X1BL,315

PESD5V0X1BL,315 Summary of contents

Page 1

PESD5V0X1BA; PESD5V0X1BL Ultra low capacitance bidirectional ESD protection diodes Rev. 01 — 4 November 2008 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin PESD5V0X1BA 1 2 PESD5V0X1BL 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 4. Type number PESD5V0X1BA PESD5V0X1BL 4. Marking Table 5. Type number PESD5V0X1BA PESD5V0X1BL 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 3

... NXP Semiconductors Table unless otherwise specified. amb Symbol Per diode V ESD [1] Device stressed with ten non-repetitive ESD pulses. Table 8. Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) Fig 1. PESD5V0X1BA_PESD5V0X1BL_1 Product data sheet PESD5V0X1BA; PESD5V0X1BL Ultra low capacitance bidirectional ESD protection diodes ...

Page 4

... NXP Semiconductors 6. Characteristics Table unless otherwise specified. amb Symbol Per diode V RWM dif 1 (pF) 0.96 0.92 0.88 0.84 0. MHz amb Fig 2. Diode capacitance as a function of reverse voltage; typical values PESD5V0X1BA_PESD5V0X1BL_1 Product data sheet PESD5V0X1BA; PESD5V0X1BL Ultra low capacitance bidirectional ESD protection diodes ...

Page 5

... NXP Semiconductors ESD TESTER IEC 61000-4-2 network C = 150 pF 330 Z Z GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) GND unclamped 8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 4. ESD clamping test setup and waveforms PESD5V0X1BA_PESD5V0X1BL_1 Product data sheet PESD5V0X1BA; PESD5V0X1BL ...

Page 6

... NXP Semiconductors 7. Application information PESD5V0X1BA and PESD5V0X1BL are designed for the protection of one bidirectional data or signal line from the damage caused by ESD. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. Fig 5. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT) ...

Page 7

... NXP Semiconductors 9. Package outline 1.35 1.15 1 2.7 1.8 2.3 1.6 2 0.40 0.25 Dimensions in mm Fig 6. Package outline PESD5V0X1BA (SOD323/SC-76) 10. Packing information Table 10. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PESD5V0X1BA PESD5V0X1BL [1] For further information and the availability of packing methods, see ...

Page 8

... NXP Semiconductors 11. Soldering 1.65 Fig 8. 2.75 Fig 9. PESD5V0X1BA_PESD5V0X1BL_1 Product data sheet PESD5V0X1BA; PESD5V0X1BL Ultra low capacitance bidirectional ESD protection diodes 3.05 2.1 0.95 2 Reflow soldering footprint PESD5V0X1BA (SOD323/SC-76) 5 2 Wave soldering footprint PESD5V0X1BA (SOD323/SC-76) Rev. 01 — 4 November 2008 ...

Page 9

... NXP Semiconductors 0.9 Fig 10. Reflow soldering footprint PESD5V0X1BL (SOD882) PESD5V0X1BA_PESD5V0X1BL_1 Product data sheet PESD5V0X1BA; PESD5V0X1BL Ultra low capacitance bidirectional ESD protection diodes 1.3 0 Reflow soldering is the only recommended soldering method. Rev. 01 — 4 November 2008 R0. 0.6 0 Dimensions in mm © NXP B.V. 2008. All rights reserved. ...

Page 10

... NXP Semiconductors 12. Revision history Table 11. Revision history Document ID PESD5V0X1BA_PESD5V0X1BL_1 20081104 PESD5V0X1BA_PESD5V0X1BL_1 Product data sheet PESD5V0X1BA; PESD5V0X1BL Ultra low capacitance bidirectional ESD protection diodes Release date Data sheet status Product data sheet Rev. 01 — 4 November 2008 Change notice Supersedes - - © NXP B.V. 2008. All rights reserved. ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Application information Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 Packing information Soldering ...

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