PESD3V3L4UG,115 NXP Semiconductors, PESD3V3L4UG,115 Datasheet - Page 8

• Manufacturer Part Number: PESD3V3L4UG,115
• Description: DIODE QUAD ESD PROTECTION SOT353
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD3V3L4UG,115

• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.32V
• Power (watts): 30W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 8 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 30 W
• Capacitance: 28 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.05 mm W x 1.5 mm L x 0.5 mm H
• Number Of Elements: 4
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 5.32V
• Reverse Stand-off Voltage: 3.3V
• Leakage Current (max): 300nA
• Peak Pulse Current: 3A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4042-2; 934057784115; PESD3V3L4UG T/R; PESD3V3L4UG T/R

NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 7. V-I characteristics for a unidirectional ESD protection diode
Low capacitance unidirectional quadruple ESD protection diode arrays
Rev. 04 — 28 February 2008
V
CL
V
BR
V
RWM
P-N
+
I
I
I
I
RM
R
PP
PESDxL4UF/G/W
006aaa407
V
© NXP B.V. 2008. All rights reserved.
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