PESD5V0U1BB,115 NXP Semiconductors, PESD5V0U1BB,115 Datasheet - Page 4

• Manufacturer Part Number: PESD5V0U1BB,115
• Description: DIODE ULOW ESD PROTECTION SOD523
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0U1BB,115

• Package / Case: SC-79, SOD-523
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Operating Voltage: 5 V
• Breakdown Voltage: 7 V
• Termination Style: SMD/SMT
• Capacitance: 2.9 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 0.85 mm W x 1.65 mm L x 0.65 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4295-2; 934060855115; PESD5V0U1BB T/R

NXP Semiconductors
6. Characteristics
PESD5V0U1BA_BB_BL_1
Product data sheet
Fig 2. Diode capacitance as a function of reverse
(pF)
C
d
3.0
2.6
2.2
1.8
f = 1 MHz; T
voltage; typical values
0
1
amb
= 25 C
Table 9.
T
Symbol
Per diode
V
I
V
C
r
RM
amb
dif
2
RWM
BR
d
= 25 C unless otherwise specified.
3
Characteristics
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
differential resistance
4
006aab036
V
R
(V)
5
Rev. 01 — 25 April 2007
Ultra low capacitance bidirectional ESD protection diodes
Fig 3. V-I characteristics for a bidirectional ESD
Conditions
V
I
f = 1 MHz
I
R
R
V
RWM
CL
V
V
= 5 mA
= 1 mA
R
R
V
PESD5V0U1BA/BB/BL
= 0 V
= 5 V
protection diode
= 5 V
BR
V
RWM
I
Min
-
-
5.5
-
-
-
I
RM
PP
I
R
I
I
I
RM
R
PP
Typ
-
5
7
2.9
1.9
-
© NXP B.V. 2007. All rights reserved.
Max
5
100
9.5
3.5
-
100
V
RWM
+
006aaa676
V
BR
Unit
V
nA
V
pF
pF
V
4 of 12
CL