PESD3V3S4UD,115 NXP Semiconductors, PESD3V3S4UD,115 Datasheet - Page 6

• Manufacturer Part Number: PESD3V3S4UD,115
• Description: DIODE ARRAY ESD 3.3V 6-TSOP
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD3V3S4UD,115

• Package / Case: 6-TSOP
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.3V
• Power (watts): 200W
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 20 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 215 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.7 mm W x 3.1 mm L x 1.1 mm H
• Number Of Elements: 4
• Package Type: SC-74
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 5.3V
• Reverse Stand-off Voltage: 3.3V
• Leakage Current (max): 800uA
• Peak Pulse Current: 20A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4266-2; 934059301115; PESD3V3S4UD T/R

NXP Semiconductors
PESDXS4UD_SER_2
Product data sheet
Fig 5.
Fig 7.
I
RM(25 C)
I
(pF)
RM
C
(1) PESD3V3S4UD
(2) PESD5V0S4UD
10
220
180
140
100
d
60
10
1
1
100
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
PESD3V3S4UD
PESD5V0S4UD
I
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
R
is less than 5 nA at 150 C
1
50
amb
= 25 C
2
0
(1)
(2)
50
3
100
4
006aaa700
006aaa699
V
T
j
R
( C)
(V)
150
Rev. 02 — 21 August 2009
5
Quadruple ESD protection diode arrays in a SOT457 package
Fig 6.
Fig 8.
(pF)
C
(1) PESD12VS4UD
(2) PESD15VS4UD
(3) PESD24VS4UD
d
V
80
60
40
20
CL
0
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
V-I characteristics for a unidirectional ESD
protection diode
V
BR
PESDxS4UD series
V
5
RWM
amb
P-N
(1)
(2)
(3)
= 25 C
10
+
15
I
I
I
I
RM
R
PP
© NXP B.V. 2009. All rights reserved.
20
006aaa701
V
R
(V)
006aaa407
25
V
6 of 12