PESD5V0S2BT,215 NXP Semiconductors, PESD5V0S2BT,215 Datasheet - Page 8

• Manufacturer Part Number: PESD5V0S2BT,215
• Description: DIODE BIDIR ESD PROTECT SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S2BT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Power (watts): 130W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 14 V
• Operating Voltage: 5 V
• Breakdown Voltage: 9.5 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 130 W
• Capacitance: 35 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4056-2; 934058007215; PESD5V0S2BT T/R; PESD5V0S2BT T/R

NXP Semiconductors
8. Package outline
9. Packing information
PESD5V0S2BT_3
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PESD5V0S2BT
Fig 9.
For further information and the availability of packing methods, see
Package outline SOT23 (TO-236AB)
Packing methods
Package
SOT23
2.5
2.1
Dimensions in mm
Rev. 03 — 9 February 2009
1.4
1.2
Low capacitance bidirectional double ESD protection diode
Description
4 mm pitch, 8 mm tape and reel
1
3.0
2.8
1.9
3
2
0.48
0.38
0.45
0.15
PESD5V0S2BT
Section
1.1
0.9
0.15
0.09
[1]
04-11-04
13.
Packing quantity
3000
-215
© NXP B.V. 2009. All rights reserved.
10000
-235
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