PESD12VS2UAT,215 NXP Semiconductors, PESD12VS2UAT,215 Datasheet

DIODE DUAL ESD PROTECTION SOT23

PESD12VS2UAT,215

Manufacturer Part Number
PESD12VS2UAT,215
Description
DIODE DUAL ESD PROTECTION SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD12VS2UAT,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Reverse Standoff (typ)
12V
Voltage - Breakdown
14.7V
Power (watts)
180W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Bidirectional
Clamping Voltage
35 V
Operating Voltage
12 V
Breakdown Voltage
15 V
Termination Style
SMD/SMT
Peak Surge Current
5 A
Peak Pulse Power Dissipation
180 W
Capacitance
38 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.4 mm W x 3 mm L x 1.1 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4024-2
934058064215
PESD12VS2UAT T/R
PESD12VS2UAT T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxS2UAT series
Double ESD protection diodes
in SOT23 package
Product data sheet
2004 Feb 18

Related parts for PESD12VS2UAT,215

PESD12VS2UAT,215 Summary of contents

Page 1

DATA SHEET PESDxS2UAT series Double ESD protection diodes in SOT23 package Product data sheet DISCRETE SEMICONDUCTORS 2004 Feb 18 ...

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... NXP Semiconductors Double ESD protection diodes in SOT23 package FEATURES • Unidirectional ESD protection two lines • Common-cathode configuration • Max. peak pulse power 330 • Low clamping voltage: V (CL)R • Ultra-low reverse leakage current: I • ESD protection > • IEC 61000-4-2; level 4 (ESD) • ...

Page 3

... NXP Semiconductors Double ESD protection diodes in SOT23 package ORDERING INFORMATION TYPE NUMBER NAME PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER P peak pulse power pp PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT I peak pulse current ...

Page 4

... NXP Semiconductors Double ESD protection diodes in SOT23 package ESD maximum ratings SYMBOL PARAMETER ESD electrostatic discharge Notes 1. Device stressed with ten non-repetitive ESD pulses; see Fig.3. 2. Measured from pin pin ESD standards compliance ESD STANDARD IEC 61000-4-2; level 4 (ESD); see Fig.3 HBM MIL-Std 883 ...

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... NXP Semiconductors Double ESD protection diodes in SOT23 package ELECTRICAL CHARACTERISTICS = 25 °C; unless otherwise specified SYMBOL PARAMETER V reverse stand-off voltage RWM PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT I reverse leakage current RM PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT V breakdown voltage BR PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT C diode capacitance ...

Page 6

... NXP Semiconductors Double ESD protection diodes in SOT23 package SYMBOL PARAMETER R differential resistance diff PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. GRAPHICAL DATA ( ( ( (1) PESD3V3S2UAT and PESD5V0S2UAT. ...

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... NXP Semiconductors Double ESD protection diodes in SOT23 package 240 C d (pF) 200 160 (1) 120 ( (1) PESD3V3S2UAT 3.3 V. RWM (2) PESD5V0S2UAT RWM = 25 ° MHz. T amb Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2004 Feb 18 001aaa148 ( PESDxS2UAT series (pF (1) (2) ( (1) PESD12VS2UAT RWM (2) PESD15VS2UAT RWM (3) PESD24VS2UAT ...

Page 8

... NXP Semiconductors Double ESD protection diodes in SOT23 package R(25˚C) 1 −1 10 −100 −50 0 (1) PESD3V3S2UAT 3.3 V. RWM PESD5V0S2UAT RWM is less than 150 °C for PESD12V52UAT RWM PESD15VS2UAT RWM PESD24VS2UAT RWM Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values. ...

Page 9

... NXP Semiconductors Double ESD protection diodes in SOT23 package ESD TESTER note 1 Note 1: IEC61000-4-2 network = 330 Ω 150 pF vertical scale = 200 V/div horizontal scale = 50 ns/div GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform ...

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... NXP Semiconductors Double ESD protection diodes in SOT23 package APPLICATION INFORMATION The PESDxS2UAT series can protect up to two lines against damage caused by unidirectional ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UAT series can protect lines whose signal polarities are below ground. PESDxS2UAT series provide a surge capability 330 Watts peak pulse power per line for a 8/20 µs waveform. ...

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... NXP Semiconductors Double ESD protection diodes in SOT23 package PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Feb scale 3.0 1.4 2.5 1.9 0.95 2.8 1 ...

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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 13

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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