PESD3V3U1UT,215 NXP Semiconductors, PESD3V3U1UT,215 Datasheet - Page 11

• Manufacturer Part Number: PESD3V3U1UT,215
• Description: DIODE ULOW ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3U1UT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.8V
• Power (watts): 80W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 9 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 6.4 V
• Termination Style: SMD/SMT
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 80 W
• Capacitance: 0.6 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4047-2; 934059101215; PESD3V3U1UT T/R; PESD3V3U1UT T/R

NXP Semiconductors
11. Revision history
Table 10.
PESDXU1UT_SER_2
Product data sheet
Document ID
PESDXU1UT_SER_2
Modifications:
PESDXU1UT_SER_1
Revision history
Release date
20090820
20050511
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
Change notice
-
-
PESDxU1UT series
Supersedes
PESDXU1UT_SER_1
-
© NXP B.V. 2009. All rights reserved.
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