PESD12VU1UT,215 NXP Semiconductors, PESD12VU1UT,215 Datasheet
PESD12VU1UT,215
Specifications of PESD12VU1UT,215
934059104215
PESD12VU1UT T/R
PESD12VU1UT T/R
Related parts for PESD12VU1UT,215
PESD12VU1UT,215 Summary of contents
Page 1
PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 02 — 20 August 2009 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package designed ...
Page 2
... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT 4. Marking Table 4. Type number PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESDXU1UT_SER_2 Product data sheet Ultra low capacitance ESD protection diode in SOT23 package ...
Page 3
... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. PESDXU1UT_SER_2 Product data sheet Ultra low capacitance ESD protection diode in SOT23 package Limiting values ...
Page 4
... NXP Semiconductors Table 6. Symbol V ESD [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin Table 7. Standard IEC 61000-4-2; level 4 (ESD) HBM MIL-STD-883; class 3 120 100 % (%) Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 PESDXU1UT_SER_2 Product data sheet Ultra low capacitance ESD protection diode in SOT23 package ...
Page 5
... NXP Semiconductors 6. Characteristics Table 8. Characteristics unless otherwise specified amb Symbol Parameter V reverse stand-off voltage RWM PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT I reverse leakage current RM PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT V breakdown voltage BR PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT C diode capacitance d V clamping voltage ...
Page 6
... NXP Semiconductors RWM + P-N Fig 3. V-I characteristics PESDXU1UT_SER_2 Product data sheet Ultra low capacitance ESD protection diode in SOT23 package R(25˚ 006aaa407 Fig 4. Rev. 02 — 20 August 2009 PESDxU1UT series 100 100 PESD3V3U1UT; PESD5V0U1UT I is less than 150 C for: R PESD12VU1UT; PESD15VU1UT; PESD24VU1UT Relative variation of reverse leakage current as a function of junction temperature ...
Page 7
... NXP Semiconductors 7. Application information The PESDxU1UT series is designed for protection of high-speed datalines from damage caused by ESD and surge pulses. PESDxU1UT devices combine an ESD protection diode and an ultra low capacitance compensation diode to ensure an effective device capacitance as low as 0.6 pF. The PESDxU1UT series provides a surge capability 200 W per line for an 8/20 s waveform ...
Page 8
... NXP Semiconductors Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxU1UT as close to the input terminal or connector as possible. 2. The path length between the PESDxU1UT and the protected line should be minimized ...
Page 9
... NXP Semiconductors 8. Test information ESD TESTER IEC 61000-4-2 network C = 150 pF 330 Z Z GND unclamped 1 kV ESD voltage waveform (IEC 61000-4-2 network) GND unclamped 1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 7. ESD clamping test setup and waveforms PESDXU1UT_SER_2 Product data sheet ...
Page 10
... NXP Semiconductors 9. Package outline Fig 8. 10. Packing information Table 9. The -xxx numbers are the last three digits of the 12NC ordering code. Type number PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT [1] For further information and the availability of packing methods, see PESDXU1UT_SER_2 Product data sheet Ultra low capacitance ESD protection diode in SOT23 package 3 ...
Page 11
... Revision history Document ID Release date PESDXU1UT_SER_2 20090820 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. PESDXU1UT_SER_1 20050511 PESDXU1UT_SER_2 Product data sheet ...
Page 12
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 13
... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Application information Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Legal information ...