PESD5V0L1BA,115 NXP Semiconductors, PESD5V0L1BA,115 Datasheet - Page 7

• Manufacturer Part Number: PESD5V0L1BA,115
• Description: DIODE LOW ESD PROTECTION SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L1BA,115

• Package / Case: SC-76, SOD-323, UMD2
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 7V
• Power (watts): 500W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 10 V
• Operating Voltage: 5 V
• Breakdown Voltage: 7.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 500 W
• Capacitance: 75 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.35 mm W x 1.8 mm L x 1.1 mm H
• Number Of Elements: 1
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 7V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 1uA
• Peak Pulse Current: 15A
• Test Current (it): 5mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4049-2; 934058421115; PESD5V0L1BA T/R; PESD5V0L1BA T/R

NXP Semiconductors
PESDXL1BA_SER_2
Product data sheet
Fig 3.
Fig 5.
(pF)
C
P
(W)
d
(1) PESD3V3L1BA and PESD5V0L1BA
(2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA
(1) PESD3V3L1BA
(2) PESD5V0L1BA
PP
110
100
10
10
10
10
90
80
70
60
50
4
3
2
1
0
T
t
Peak pulse power dissipation as a function of
pulse time; typical values
T
Diode capacitance as a function of reverse
voltage; typical values
p
amb
amb
= 8/20 s exponential decay waveform; see
= 25 C
= 25 C; f = 1 MHz
1
10
2
(1)
(2)
10
2
(1)
(2)
3
10
3
4
006aaa066
t
006aaa067
p
V
( s)
R
(V)
Low capacitance bidirectional ESD protection diodes in SOD323
10
Rev. 02 — 20 August 2009
5
Figure 1
4
Fig 4.
Fig 6.
P
PP(25 C)
P
(pF)
C
PP
(1) PESD12VL1BA
(2) PESD15VL1BA
(3) PESD24VL1BA
d
1.2
0.8
0.4
20
16
12
8
4
0
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
0
T
Diode capacitance as a function of reverse
voltage; typical values
amb
= 25 C; f = 1 MHz
PESDxL1BA series
5
50
10
100
(1)
15
(2)
150
© NXP B.V. 2009. All rights reserved.
20
001aaa193
T
006aaa068
V
j
( C)
R
(V)
(3)
200
25
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