PESD5V0S1UB,115 NXP Semiconductors, PESD5V0S1UB,115 Datasheet - Page 7

• Manufacturer Part Number: PESD5V0S1UB,115
• Description: DIODE ESD PROTECTION SOD523
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S1UB,115

• Package / Case: SC-79, SOD-523
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.4V
• Power (watts): 260W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 20 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.4 V
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 260 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 0.85(Max) mm W x 1.25(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4055-2; 934058511115; PESD5V0S1UB T/R; PESD5V0S1UB T/R

NXP Semiconductors
PESDXS1UB_SERIES_2
Product data sheet
Fig 3.
Fig 5.
(pF)
P
(W)
C
(1) PESD3V3S1UB and PESD5V0S1UB
(2) PESD12VS1UB, PESD15VS1UB; PESD24VS1UB
(1) PESD3V3S1UB
(2) PESD5V0S1UB
pp
240
200
160
120
10
10
10
d
10
80
40
4
3
2
1
0
T
t
see
Peak pulse power dissipation as a function of
pulse time; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
p
amb
= 8/20 s exponentially decay waveform,
Figure 1
= 25 C
1
10
(1)
(2)
amb
= 25 C
2
10
2
(1)
(2)
3
10
3
4
001aaa147
001aaa148
t
p
V
( s)
R
(V)
10
Rev. 02 — 24 August 2009
5
4
Fig 4.
Fig 6.
P
PP(25 C)
P
(pF)
C
PP
(1) PESD12VS1UB
(2) PESD15VS1UB
(3) PESD24VS1UB
d
1.2
0.8
0.4
50
40
30
20
10
0
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
ESD protection diodes in SOD523 package
PESDxS1UB series
5
50
(1)
(2)
(3)
amb
= 25 C
10
100
15
150
© NXP B.V. 2009. All rights reserved.
20
001aaa193
T
001aaa149
V
j
( C)
R
(V)
200
25
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