PESD12VS1UL,315 NXP Semiconductors, PESD12VS1UL,315 Datasheet - Page 5

• Manufacturer Part Number: PESD12VS1UL,315
• Description: DIODE ESD PROTECTION SOD`-882
• Manufacturer: NXP Semiconductors

Specifications of PESD12VS1UL,315

• Package / Case: SOD-882
• Voltage - Reverse Standoff (typ): 12V
• Voltage - Breakdown: 14.7V
• Power (watts): 150W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Breakdown Voltage: 15 V
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 150 W
• Capacitance: 38 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 0.62(Max) mm W x 1.02(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4797-2; 934059977315; PESD12VS1UL T/R; PESD12VS1UL T/R; PESD12VS1UL,315

NXP Semiconductors
PESDXS1UL_SER_2
Product data sheet
Table 8.
T
[1]
Symbol
C
V
r
dif
amb
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
= 25 C unless otherwise specified
Parameter
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
Rev. 02 — 20 August 2009
…continued
Conditions
f = 1 MHz; V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
R
R
R
R
R
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 0.5 mA
= 1 A
= 15 A
= 1 A
= 15 A
= 1 A
= 5 A
= 1 A
= 5 A
= 1 A
= 3 A
ESD protection diodes in a SOD882 package
R
PESDxS1UL series
= 0 V
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
207
152
38
32
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
300
200
75
70
50
8
20
9
20
19
35
23
40
36
70
400
80
200
225
300
Unit
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
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