TCET1103 Vishay, TCET1103 Datasheet - Page 3

• Manufacturer Part Number: TCET1103
• Description: OPTOCOUPLER PHOTOTRANS 200% 4DIP
• Manufacturer: Vishay

Specifications of TCET1103

• Mounting Type: Through Hole
• Isolation Voltage: 5000 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 34% @ 1mA
• Current Transfer Ratio (max): 200% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Output Type: Transistor
• Package / Case: 4-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Approval Bodies: VDE, CSA, BSI EN
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TCET1100, TCET1100G
Vishay Semiconductors
Note
(1)
(2)
Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
812
amb
THERMAL CHARACTERISTICS
PARAMETER
LED power dissipation
Output power dissipation
Maximum LED junction temperature
Maximum output die junction temperature
Thermal resistance, junction emitter to board
Thermal resistance, junction emitter to case
Thermal resistance, junction detector to board
Thermal resistance, junction detector to case
Thermal resistance, junction emitter to
junction detector
Thermal resistance, board to ambient
Thermal resistance, case to ambient
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector emitter cut-off current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal
Characteristics of Optocouplers” application note.
For 2 layer FR4 board (4" x 3" x 0.062").
= 25 °C, unless otherwise specified.
For technical questions, contact:
(2)
V
(2)
CE
Optocoupler, Phototransistor Output,
V
= 5 V, I
CE
I
F
TEST CONDITION
V
= 20 V, I
= 10 mA, I
(1)
R
SYMBOL
I
F
I
= 0, f = 1 MHz
E
I
f = 1 MHz
F
C
T
T
= 10 mA, R
P
P
= 100 µA
θ
θ
θ
θ
θ
θ
θ
= 50 mA
jmax.
jmax.
= 1 mA
diss
diss
DC
EB
EC
DB
ED
BA
CA
F
High Temperature
= 0 A, E = 0
C
= 1 mA
L
VALUE
= 100 Ω
4041
100
150
125
125
173
149
111
127
173
197
[e-mail]
SYMBOL
V
V
V
I
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
CEO
CEsat
mW
mW
V
C
C
CEO
ECO
f
°C
°C
c
F
k
j
MIN.
70
7
T
19996
JD
θ
DB
θ
DC
TYP.
1.25
110
0.3
50
10
T
T
T
B
C
A
θ
Document Number: 83503
DE
T
θ
θ
A
MAX.
CA
BA
100
1.6
0.3
Rev. 2.3, 14-Oct-09
Package
θ
EC
θ
EB
T
UNIT
JE
kHz
pF
nA
pF
V
V
V
V