TCET1103 Vishay, TCET1103 Datasheet
TCET1103
Specifications of TCET1103
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TCET1103 Summary of contents
Page 1
... The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety require- ments. Isolation materials according to UL94-VO Document Number 83503 Rev. 2.2, 05-Sep-06 TCET1100/TCET1100G Vishay Semiconductors ...
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... CTR 130 - 260 %, DIP-4 TCET1109 CTR 200 - 400 %, DIP-4 TCET1100G CTR 50 - 600 %, DIP-4 TCET1101G CTR DIP-4 TCET1102G CTR 63 - 125 %, DIP-4 TCET1103G CTR 100 - 200 %, DIP-4 TCET1104G CTR 160 - 320 %, DIP-4 TCET1105G CTR 50 - 150 %, DIP-4 TCET1106G CTR 100 - 300 %, DIP-4 TCET1107G CTR 80 - 160 %, DIP-4 ...
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... The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the tem- peratures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers Application note. ...
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... TCET1103G TCET1104 TCET1104G TCET1100 = TCET1100G TCET1105 TCET1105G TCET1106 TCET1106G TCET1107 TCET1107G TCET1108 TCET1108G TCET1109 TCET1109G TCET1101 = TCET1101G TCET1102 TCET1102G TCET1103 TCET1103G TCET1104 TCET1104G Min Typ. Max 1.25 1.6 50 Min Typ. Max 100 Min Typ. Max 0.3 110 0.3 Symbol Min Typ. ...
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... IO = 150 °C amb IOTM IOWM V IORM 0 150 125 13930 Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 Vishay Semiconductors Min Typ. Max 130 Min Typ. Max 265 Min Typ. Max 8 150 Min Typ. Max 1.6 8 1.3 ...
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... TCET1100/TCET1100G Vishay Semiconductors Switching Characteristics Parameter Delay time (see figure 3) Rise time (see figure 3) Turn-on time (see figure 3) Storage time (see figure 3) Fall time (see figure 3) Turn-off time (see figure 3) Turn-on time (see figure 4) Turn-off time (see figure mA; adjusted through 0.01 ...
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... Figure 9. Collector Dark Current vs. Ambient Temperature 100 0.1 0.01 2.0 1.4 1.6 1.8 95 11027 Figure 10. Collector Current vs. Forward Current 100 0 10985 Figure 11. Collector Current vs. Collector Emitter Voltage Vishay Semiconductors 100 Ambient Temperature (°C) amb 100 0 Forward Current (mA) ...
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... TCET1100/TCET1100G Vishay Semiconductors 1 0.8 CTR = 50 % 0.6 0.4 0 Collector Current (mA) 95 11028 C Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1000 100 Forward Current (mA) 95 11029 F Figure 13. Current Transfer Ratio vs. Forward Current 10 Non Saturated Operation 100 Ω off Collector Current (mA) 95 11030 C Figure 14 ...
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... Package Dimensions in mm Package Dimensions in mm Document Number 83503 Rev. 2.2, 05-Sep-06 TCET1100/TCET1100G Vishay Semiconductors 14789 14792 www.vishay.com 9 ...
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... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...