NCP1397BDR2G ON Semiconductor, NCP1397BDR2G Datasheet - Page 5

• Manufacturer Part Number: NCP1397BDR2G
• Description: IC CTLR RESONANT HI PERF 16-SOIC
• Manufacturer: ON Semiconductor

Specifications of NCP1397BDR2G

• Pwm Type: Controller
• Number Of Outputs: 1
• Frequency - Max: 560kHz
• Duty Cycle: 52%
• Voltage - Supply: 10.3 V ~ 20 V
• Buck: No
• Boost: No
• Flyback: No
• Inverting: No
• Doubler: No
• Divider: No
• Cuk: No
• Isolated: Yes
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 16-SOIC (3.9mm Width, 15 Leads)
• Frequency-max: 560kHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device(s) contains ESD protection and exceeds the following tests:
2. This device meets latchup tests defined by JEDEC Standard JESD78.
MAXIMUM RATINGS
High Voltage bridge pin, pin 14
Floating supply voltage, ground referenced
High side output voltage
Low side output voltage
Allowable output slew rate
Power Supply voltage, pin 12
Maximum voltage, all pins (except pin 11 and 10)
Thermal Resistance Junction−to−Air, PDIP version
Thermal Resistance Junction−to−Air, SOIC version
Storage Temperature Range
ESD Capability, Human Body Model (HBM) (All pins except HV pins)
ESD Capability, Machine Model (MM)
Human Body Model 2000 V per JEDEC Standard JESD22−A114E
Machine Model 200 V per JEDEC Standard JESD22−A115−A
Rating
http://onsemi.com
5
V
BOOT
dV
V
V
V
Symbol
BRIDGE
DRV(LO)
BRIDGE
DRV(HI)
R
R
V
− V
qJA
qJA
CC
−
−
−
−
BRIDGE
/dt
−0.3 to V
V
BRIDGE
−60 to +150
V
−0.3 to 10
−1 to 600
BOOT
0 to 20
Value
100
130
200
50
20
2
−0.3 to
CC
+0.3
+0.3
°C/W
°C/W
V/ns
Unit
°C
kV
V
V
V
V
V
V
V