TEA1713T/N1,518 NXP Semiconductors, TEA1713T/N1,518 Datasheet - Page 20

• Manufacturer Part Number: TEA1713T/N1,518
• Description: IC CTLR RESONANT PFC 24SOIC
• Manufacturer: NXP Semiconductors

Specifications of TEA1713T/N1,518

• Package / Case: *
• Mounting Type: *
• Frequency - Switching: 125kHz
• Mode: Discontinuous Conduction (DCM)
• Switching Frequency: 125 KHz
• Maximum Power Dissipation: 0.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Startup: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 935289598518

NXP Semiconductors
TEA1713T
Product data sheet
7.8.4.1 Inductive mode (normal operation)
7.8.4 HBC Adaptive Non-Overlap (ANO) time function (pin HB)
Figure 9
The high efficiency characteristic of a resonant converter is the result of Zero-Voltage
Switching (ZVS) of the power MOSFETs, also called soft switching. To facilitate soft
switching, a small non-overlap time is required between the on-times of the high- and
low-side MOSFETs. During this non-overlap time, the primary resonant current
(dis-)charges the capacitance of the half-bridge between ground and the boost voltage.
After this (dis-)charge, the body diode of the MOSFET starts conducting and because the
voltage across the MOSFET is zero, there are no switching losses when the MOSFET is
switched on. This mode of operation is called inductive mode because the switching
frequency is above the resonance frequency and the resonant tank has an inductive
impedance.
The time required for the HB transition depends on the amplitude of the resonant current
at the instant of switching. There is a complex relationship between this amplitude, the
frequency, the boost voltage and the output voltage. Ideally the IC should switch the
MOSFET on as soon as the HB transition has been completed. If it waits any longer, the
HP voltage may swing back, especially at high output loads. The advanced adaptive
non-overlap time function takes care of this timing, so that it’s not necessary to chose a
fixed dead time (which is always a compromise). This saves on external components.
Adaptive non-overlap time sensing measures the HB slope after one MOSFET has been
switched off. Normally, the HB slope starts immediately (the voltage starts rising or falling).
Once the transition at the HB node is complete, the slope ends (the voltage stops
rising/falling). This is detected by the ANO time sensor and the other MOSFET is switched
Fig 9.
•
Several protection circuits and the state of the SSHBC/EN input determine whether
the resonant converter is allowed to start switching.
GATEHS
I
GATELS
Tr(HBC)
CFMIN
V
HB
Boost
provides an overview of typical switching behavior.
Switching behavior of the HBC
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2011
Resonant power supply control IC with PFC
TEA1713T
© NXP B.V. 2011. All rights reserved.
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