TEA1713T/N1,518 NXP Semiconductors, TEA1713T/N1,518 Datasheet - Page 19

• Manufacturer Part Number: TEA1713T/N1,518
• Description: IC CTLR RESONANT PFC 24SOIC
• Manufacturer: NXP Semiconductors

Specifications of TEA1713T/N1,518

• Package / Case: *
• Mounting Type: *
• Frequency - Switching: 125kHz
• Mode: Discontinuous Conduction (DCM)
• Switching Frequency: 125 KHz
• Maximum Power Dissipation: 0.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Startup: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 935289598518

NXP Semiconductors
TEA1713T
Product data sheet
7.7.10 PFC short circuit/open-loop protection, SCP/OLP-PFC (pin SNSBOOST)
7.8.1 HBC high-side and low-side driver (pin GATEHS and GATELS)
7.8.2 HBC boost undervoltage protection, UVP-boost (pin SNSBOOST)
7.8.3 HBC switch control
7.8 HBC controller
Switching of the power factor correction circuit is inhibited as soon as the voltage on the
SNSBOOST pin rises above V
V
Overvoltage protection will also be triggered in the event of an open circuit at the resistor
connected between SNSBOOST and ground.
The power factor correction circuit will not start switching until the voltage on the
SNSBOOST pin rises above V
boost voltage (SCP-boost).
The SNSBOOST pin draws a small input current I
disconnected, the residual current will pull down V
protection (SCP-boost). This combination creates an open-loop protection (OLP-PFC).
The HBC controller converts the 400 V boost voltage from the PFC into one or more
regulated DC output voltages and drives two external MOSFETS in a half-bridge
configuration connected to a transformer. The transformer, which has a leakage
inductance and a magnetizing inductance, forms the resonant circuit in combination with
the resonant capacitor and the load at the output. The regulation is realized via frequency
control.
Both drivers have identical driving capability. The output of each driver is connected to the
equivalent gate of an external high-voltage power MOSFET.
The low-side driver is referenced to pin PGND and is supplied from SUPREG.
The high-side driver is floating. The reference for the high-side driver is pin HB, connected
to the midpoint of the external half-bridge. The high-side driver is supplied from SUPHS
which is connected to the external bootstrap capacitor C
charged from SUPREG via external diode D
The voltage on the SNSBOOST pin is sensed continuously to prevent the HBC controller
trying to operate at very low boost input voltages. Once V
V
resumes as soon as V
HBC switch control determines when the MOSFETs switch on and off. It uses the output
from several other blocks.
SNSBOOST
uvp(SNSBOOST),
•
•
•
A divider is used to realize alternate switching of the high- and low-side MOSFETs for
each oscillator cycle. The oscillator frequency is twice the half-bridge frequency.
The controlled oscillator determines the switch-off point.
Adaptive non-overlap time sensing determines the switch-on point. This is the
adaptive non-overlap time function.
drops below V
All information provided in this document is subject to legal disclaimers.
HBC switching stops the next time GATELS goes HIGH. HBC switching
SNSBOOST
Rev. 2 — 9 February 2011
ovp(SNSBOOST)
ovp(SNSBOOST)
scp(SNSBOOST)
rises above V
again.
Resonant power supply control IC with PFC
. This acts as short circuit protection for the
. PFC switching resumes as soon as
SUPHS
start(SNSBOOST).
prot(SNSBOOST)
SNSBOOST
when the low-side MOSFET is on.
SUPHS
SNSBOOST
, triggering short circuit
. The bootstrap capacitor is
. If this pin gets
drops below
TEA1713T
© NXP B.V. 2011. All rights reserved.
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