BTS5230GS Infineon Technologies, BTS5230GS Datasheet

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Smart High-Side Power Switch PROFET Two Channels, 140 mΩ Automotive Power ...

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Table of Contents Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Smart High-Side Power Switch PROFET Product Summary The BTS 5230GS is a dual channel high-side power switch in P-DSO-14-18 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device ...

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Protective Functions • Reverse battery protection without external components (GND resistor integrated) • Short circuit protection • Overload protection • Multi-step current limitation • Thermal shutdown with restart • Thermal restart at reduced current limitation • Overvoltage protection without external ...

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Overview The BTS 5230GS is a dual channel high-side power switch (two times 140 mΩ) in P-DSO-14-18 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function ...

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Terms Following figure shows all terms used in this data sheet IN1 I V IN2 IN1 V IN2 I IS1 I V IS2 IS1 V IS2 I SEN V SEN Figure 2 Terms Symbols without channel ...

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Pin Configuration 2.1 Pin Assignment BTS 5230GS Figure 3 Pin Configuration P-DSO-14-18 2.2 Pin Definitions and Functions Pin Symbol 3 IN1 6 IN2 4 IS1 5 IS2 9 SEN 12, 13 OUT1 10, 11 OUT2 2 GND 1, 7, ...

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Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability °C (unless otherwise specified Pos. ...

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T j Pos. Parameter Temperatures 3.1.13 Junction Temperature 3.1.14 Dynamical temperature increase while switching 3.1.15 Storage Temperature ESD Susceptibility 3.1.16 ESD susceptibility HBM 1) R and L describe the complete circuit impedance including line, ...

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Block Description and Electrical Characteristics 4.1 Power Stages The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Output On-State Resistance The on-state resistance depends on the supply voltage as well as the ...

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A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission OUT 90% 70% 30% 10% Figure 6 Switching a Load ...

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V OUT OUT(CL Figure 8 Switching an Inductance Maximum Load Inductance While demagnization of inductive loads, energy has to be dissipated in the BTS 5230GS. This energy can be calculated with following equation ...

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Electrical Characteristics = -40 °C to +150 °C (unless otherwise specified typical values Pos. Parameter General 4.1.1 Operating voltage 4.1.2 Operating current one channel ...

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typical values Pos. Parameter Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient one channel ...

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Protection Functions The device is fully protected by embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions ...

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Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following fomular for estimation of total power dissipation The reverse current through the intrinsic ...

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Electrical Characteristics = -40 °C to +150 °C (unless otherwise specified typical values Pos. Parameter Over Load Protection 4.2.1 Load current limitation 4.2.2 Repetitive ...

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Diagnosis For diagnosis purpose, the BTS 5230GS provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal to the load current (ratio Table 1) occures. In case of open load in ...

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Table 1 Truth Table Operation Mode Normal Operation (ON) Current Limitation Short Circuit to GND Over-Temperature Short Circuit Open Load L = Low Level High Level high impedance, potential depends on leakage currents ...

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In case of over-current as well as over-temperature, the current sense signal is switched off result, one threshold is enough to distinguish between normal and faulty operation. Open load and over-load can be differentiated by switching off the ...

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I defines the leakage current in the complete system e.g. caused by humidity. leakage There is no internal leakage current from out to ground at BTS 5230GS. minimum supply voltage at which the open load diagnosis in off state must ...

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Electrical Characteristics = -40 °C to +150 ° typical values Pos. Parameter Open Load at OFF state 4.3.1 Open load detection threshold voltage 4.3.2 ...

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typical values Pos. Parameter 4.3.9 Current sense leakage, while diagnosis disabled 4.3.10 Current sense settling static ±10% time to ...

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Package Outlines BTS 5230GS P-DSO-14-18 (Plastic Dual Small Outline Package) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. SMD = Surface Mounted Device Data Sheet Smart High-Side Power ...

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Revision History Version Date Changes V2.0 05-06-08 initial version Data Sheet Smart High-Side Power Switch 25 BTS 5230GS Revision History 2005-06-13 ...

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Data Sheet Smart High-Side Power Switch 26 BTS 5230GS Revision History V2.0, 2005-06-13 ...

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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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... Published by Infineon Technologies AG ...