VNQ830-E STMicroelectronics, VNQ830-E Datasheet - Page 17

• Manufacturer Part Number: VNQ830-E
• Description: IC DRIVER HISIDE QUAD 28-SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ830-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 65 mOhm
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 36 V
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (7.5mm Width)
• Supply Voltage (min): 5.5 V
• Supply Current: 0.012 mA
• Maximum Power Dissipation: 6250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 9A
• Output Resistance: 0.065ohm
• Input Delay: 30µs
• Output Delay: 30µs
• Supply Voltage Range: 5.5V To 36V
• Driver Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 30. SO-28 Thermal Impedance Junction Ambient Single Pulse
Figure 31. Thermal fitting model of a double
channel HSD in SO-28
1000
100
Tj_1
Pd3
Pd1
Tj_2
Tj_4
Pd2
Tj_3
Pd4
0.1
10
0.0001
ZT H (°C/W)
1
C15
C1
R1
C13
R13
C7
R7
R15
C16
C14
R14
R16
C2
R2
C8
R8
0.001
R17
C3
R3
C9
R9
T_amb
R18
C10
C4
R4
R10
0.01
C11
C5
R5
R11
0.1
C12
C6
R6
R12
Time (s)
Pulse calculation formula
Table 15. Thermal Parameter
1
Z
where
R1=R7=R13=R15 (°C/W)
R2=R8=R14=R16 (°C/W)
R3=R9 (°C/W)
R4=R10 (°C/W)
R5=R11 (°C/W)
R6=R12 (°C/W)
C1=C7=C13=C15 (W.s/°C)
C2=C8=C14=C16 (W.s/°C)
C3=C9 (W.s/°C)
C4=C10 (W.s/°C)
C5=C11 (W.s/°C)
C6=C12 (W.s/°C)
R17=R18 (°C/W)
TH
Area/island (cm
=
R
10
TH
=
t
p
+
T
2
Z
)
100
THtp
1 –
5.00E-03
1.00E-02
0.001
0.05
1000
150
0.5
0.3
3.4
0.2
1.5
11
15
30
5
One channel ON
Two channels ON
on same chip
VNQ830-E
Footprint
6 cm
13
6
8
17/21
2