VNQ830-E STMicroelectronics, VNQ830-E Datasheet

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... LOSS OF GROUND PROTECTION VERY LOW STAND-BY CURRENT REVERSE BATTERY PROTECTION (**) IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE DESCRIPTION The VNQ830 quad HSD formed by assembling two VND830-E chips in the same SO- 28 package. The VNQ830 monolithic device made by using| STMicroelectronics VIPower M0-3 Technology. The VNQ830-E is intended for driving any type of multiple loads with one side connected to ground ...

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... VNQ830-E Figure 2. Block Diagram V cc CLAMP GND1,2 INPUT1 STATUS1 LOGIC OVERTEMP. 1 INPUT2 STATUS2 OVERTEMP CLAMP GND3,4 INPUT3 STATUS3 LOGIC OVERTEMP. 3 INPUT4 STATUS4 OVERTEMP. 4 2/21 V CC1,2 OVERVOLTAGE UNDERVOLTAGE CLAMP 1 DRIVER 1 CURRENT LIMITER 1 OPENLOAD ON 1 OPENLOAD OFF 1 OVERVOLTAGE UNDERVOLTAGE CLAMP 3 DRIVER 3 CURRENT LIMITER 3 ...

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... STATUS3 STATUS4 INPUT4 V CC Connection / Pin Status Floating To Ground Parameter =13.5V; T =150ºC; bat jstart =25°C lead 1 1,2 3,4 3 N.C. Output Through 10K resistor VNQ830-E Value Unit 0 200 mA Internally Limited +/- 10 mA +/- 10 mA 4000 V 4000 V 5000 V 5000 V 140 mJ 6.25 W Internally Limited ° 150 ° ...

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... VNQ830-E Figure 4. Current and Voltage Conventions I S3,4 V CC3,4 V IN1 V STAT1 V IN2 V STAT2 V IN3 V STAT3 V IN4 (*) during reverse battery condition Fn CCn OUTn Table 4. Thermal Data (Per island) Symbol Parameter R Thermal Resistance Junction-lead per chip thj-lead R Thermal Resistance Junction-ambient (one chip ON) thj-amb R Thermal Resistance Junction-ambient (two chips ON) thj-amb Note: 1 ...

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... OUT V =0V; V =3.5V IN OUT V =V =0V; V =13V; T =125°C IN OUT =0V; V =13V; T =25°C IN OUT CC j Test Conditions T >T j TSD 5.5V<V <36V CC I =2A; L=6mH OUT Test Conditions -I =1.2A; T =150°C OUT j VNQ830-E Min. Typ. Max. Unit 5 5 130 - Min. Typ. Max. ...

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... VNQ830-E ELECTRICAL CHARACTERISTICS (continued) Table 8. Status Pin (Per each channel) Symbol Parameter V Status Low Output Voltage I STAT I Status Leakage Current LSTAT Status Pin Input C STAT Capacitance V Status Clamp Voltage SCL Table 9. Switching (Per each channel) (V Symbol Parameter t Turn-on Delay Time d(on) ...

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... Undervoltage Overvoltage Output Voltage > Output Current < Figure 5. OPEN LOAD STATUS TIMING (with external pull-up) V > V OUT V INn V STATn t DOL(off) INPUT OUTPUT < I OUT INn V STATn t DOL(on) VNQ830-E SENSE < TSD (T > TSD OVER TEMP STATUS TIMING T > TSD t t SDL SDL 7/21 ...

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... VNQ830-E Figure 6. Switching time Waveforms V OUTn 80% dV /dt OUT (on) V INn td (on) Table 13. Electrical Transient Requirements On V ISO T/R 7637/1 Test Pulse +26.5 V ISO T/R 7637/1 Test Pulse CLASS C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device ...

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... INPUT n LOAD VOLTAGE n STATUS n INPUT n LOAD VOLTAGE n STATUS n INPUT n LOAD VOLTAGE n STATUS INPUT n LOAD CURRENT n STATUS n NORMAL OPERATION UNDERVOLTAGE V USDhyst V USD undefined OVERVOLTAGE V <V V > OPEN LOAD with external pull-up V >V OUT OPEN LOAD without external pull-up OVERTEMPERATURE TSD R VNQ830-E 9/21 ...

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... VNQ830-E Figure 8. Application Schematic +5V +5V +5V R prot R prot R prot R prot C R prot R prot R prot R prot +5V +5V Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2. GND PROTECTION NETWORK REVERSE BATTERY Solution 1: Resistor in the ground line (R can be used with any type of load. ...

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... The values of V the Electrical Characteristics section GND IHmax V batt DRIVER + LOGIC OUT + GROUND VNQ830 100V and I 20mA; V latchup OH C 65k . value is 10k prot ) connected between OUTPUT pin and like the +5V line used higher than OUT /(R +R ))R < Olmin ...

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... VNQ830-E Figure 10. Off State Output Current IL(off1) (uA) 2.5 2.25 Off state 2 Vcc=36V Vin=Vout=0V 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 - 100 Tc (°C) Figure 11. Input Clamp Voltage Vicl (V) 8 7.8 Iin=1mA 7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 - 100 Tc (°C) Figure 12. Status Low Output Voltage Vstat (V) 0 ...

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... Figure 21. On State Resistance Vs V case Ron (mOhm) 120 110 100 125 150 175 5 VNQ830 LIM case Vcc=13V 100 125 150 175 Tc (°C) Vcc=13V Ri=6.5Ohm 100 125 150 175 Tc (°C) CC Tc=150°C Tc=25°C Tc= - 40° ...

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... VNQ830-E Figure 22. Input High Level Vih (V) 3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 -50 - 100 Tc (°C) Figure 23. Openload On State Detection Threshold Iol (mA) 150 140 Vcc=13V 130 Vin=5V 120 110 100 -50 - 100 Tc (°C) Figure 24. Input Hysteresis Voltage Vhyst (V) 1.5 1.4 1.3 1.2 1 ...

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... C= Repetitive Pulse at T =125ºC Jstart Conditions: V =13. Demagnetization 1 10 L(mH) Values are generated with R In case of repetitive pulses, T each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. Demagnetization VNQ830 100 =0 L (at beginning of jstart Demagnetization t 15/21 ...

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... VNQ830-E SO-28 Double Island Thermal Data Figure 28. Double Island PC Board Layout condition of R and thickness=35 m, Copper areas: 0.5cm Table 14. Thermal Calculation According To The Pcb Heatsink Area Chip 1 Chip 2 ON OFF thA dchip1 OFF thC dchip2 thB dchip1 thA dchip1 R = Thermal resistance Junction to Ambient with one ...

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... C12 R5=R11 (°C/W) R6=R12 (°C/W) R11 R12 C1=C7=C13=C15 (W.s/°C) C2=C8=C14=C16 (W.s/°C) C3=C9 (W.s/°C) C4=C10 (W.s/°C) C5=C11 (W.s/°C) C6=C12 (W.s/°C) R17=R18 (°C/W) VNQ830-E One channel ON Two channels ON on same chip Footprint 100 1000 + Z 1 – THtp ...

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... VNQ830-E PACKAGE MECHANICAL Table 16. SO-28 Mechanical Data Symbol Figure 32. SO-28 Package Dimensions 18/21 millimeters Min Typ 0.10 0.35 0.23 0.50 45° (typ.) 17.7 10.00 1.27 16.51 7.40 0.40 8° (max.) Max 2.65 0.30 0.49 0.32 18.1 10.65 7.60 1.27 ...

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... N (min) T (max 1.5 1.5 7.5 6.5 2 End Top No components cover 500mm min tape Empty components pockets saled with cover tape. User direction of feed VNQ830-E 28 700 532 3.5 13.8 0.6 1000 1000 330 1.5 13 20.2 16.4 60 22.4 Start Components No components 500mm min ...

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... VNQ830-E REVISION HISTORY Date Revision Nov. 2004 DS(on) 20/21 Description of Changes value correction: 60m instead of 65m ...

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