M24C64-RMB6TG STMicroelectronics, M24C64-RMB6TG Datasheet - Page 29

• Manufacturer Part Number: M24C64-RMB6TG
• Description: IC EEPROM 64KBIT 400KHZ 8MLP
• Manufacturer: STMicroelectronics

Specifications of M24C64-RMB6TG

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 64K (8K x 8)
• Speed: 400kHz
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-MLP, 8-UFDFPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M24C64-DF, M24C64-W, M24C64-R, M24C64-F
Table 15.
1. If the application uses the voltage range F device with 2.5 V < Vcc < 5.5 V and -40 °C < TA < +85 °C,
2. Only for devices operating at f
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
CC
LO
LI
OL
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24xxx-F)
Table 12
Parameter
instead of this table.
C
max = 1 MHz (see
Doc ID 16891 Rev 23
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
During t
Device not selected
V
1.7 V ≤ V
1.7 V ≤ V
1.7 V ≤ V
I
(t
Test conditions
f
OL
c
IN
CC
IN
W
= 1 MHz
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
to those in
= 1.7 V, f
SS
SS
W
CC
CC
CC
, 1.7 V < V
or V
or V
Table
(2)
Table
< 2.5 V
< 2.5 V
< 2.5 V
c
CC
CC
= 400 kHz
CC
17).
Table 9
, V
= 1.7 V
(1)
10)
SS
CC
(in addition
CC
(4)
or V
,
= 1.7 V
< 2.5 V
and
CC
0.75V
0.75V
DC and AC parameters
–0.45
Min.
CC
CC
0.25 V
V
CC
Max.
3
± 2
± 2
0.8
2.5
6.5
0.2
1
(3)
+0.6
CC
Unit
29/44
mA
mA
mA
µA
µA
µA
V
V
V
V