CY7C1270V18-375BZXC Cypress Semiconductor Corp, CY7C1270V18-375BZXC Datasheet - Page 20

• Manufacturer Part Number: CY7C1270V18-375BZXC
• Description: IC SRAM 36MBIT 375MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1270V18-375BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 36M (1M x 36)
• Speed: 375MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with Power Applied. –55°C to + 125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z .........–0.5V to V
DC Input Voltage
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Notes
Document Number: 001-06347 Rev. *D
V
V
V
V
V
V
V
V
I
I
V
I
I
AC Input Requirements
Over the Operating Range
V
V
15. Power up: assumes a linear ramp from 0V to V
16. Outputs are impedance controlled. I
17. Outputs are impedance controlled. I
18. V
19. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
SB1
Parameter
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
[19]
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic Power Down
Current
Input HIGH Voltage
Input LOW Voltage
DD
[11]
Operating Supply
............................... –0.5V to V
DD
DDQ
Description
Description
Relative to GND .......–0.5V to + 2.9V
Relative to GND ..... –0.5V to + V
DDQ
[12]
[11]
, whichever is larger, V
OH
OL
= (V
= –(V
DDQ
DDQ
[18]
DD
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
(min) within 200 ms. During this time V
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
f = f
Max. V
Both Ports Deselected,
V
f = f
Inputs Static
Note 16
Note 17
I
I
OH
OL
DD
IN
REF
= 0.1 mA, Nominal Impedance
MAX
MAX
= –0.1 mA, Nominal Impedance
≥ V
= Max., I
(max) = 0.95V or 0.54V
DDQ
DD
DD
IH
= 1/t
= 1/t
I
I
,
or V
≤ V
≤ V
+ 0.3V
+ 0.3V
Test Conditions
Test Conditions
CYC
CYC
OUT
DDQ
DDQ,
IN
DD
≤ V
,
= 0 mA,
Output Disabled
IL
DDQ
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Operating Range
Com’l
Ind’l
Range
, whichever is smaller.
300 MHz
333 MHz
375 MHz
400 MHz
300 MHz
333 MHz
375 MHz
400 MHz
IH
< V
DD
and V
–40°C to +85°C
Temperature
0°C to +70°C
CY7C1266V18, CY7C1277V18
CY7C1268V18, CY7C1270V18
V
V
Ambient
DDQ
DDQ
DDQ
V
V
V
DDQ
REF
REF
–0.15
–0.24
< V
0.68
Min
V
Min
1.7
1.4
/2 – 0.12
/2 – 0.12
–2
–2
SS
+ 0.1
+ 0.2
DD
– 0.2
.
0.75
Typ
Typ
1.8
1.5
–
–
1.8 ± 0.1V
V
DD
V
V
V
V
[15]
DDQ
DDQ
V
V
DDQ
DDQ
REF
REF
V
1000
1080
1210
1280
Max
0.95
Max
V
290
300
320
340
/2 + 0.12
/2 + 0.12
1.9
0.2
DDQ
DD
2
2
+ 0.15
+ 0.24
– 0.1
– 0.2
1.4V to V
V
Page 20 of 27
DDQ
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
μA
μA
[15]
V
V
V
V
V
V
V
V
V
V
V
DD
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