CY7C1021B-12VXIT Cypress Semiconductor Corp, CY7C1021B-12VXIT Datasheet - Page 3

IC SRAM 1MBIT 12NS 44SOJ

CY7C1021B-12VXIT

Manufacturer Part Number
CY7C1021B-12VXIT
Description
IC SRAM 1MBIT 12NS 44SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1021B-12VXIT

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 38-05145 Rev. *C
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Current into Outputs (LOW) .........................................20 mA
Electrical Characteristics
Capacitance
Thermal Resistance
V
V
V
V
I
I
I
I
I
C
C
Notes:
Parameter
IX
OZ
CC
SB1
SB2
2. V
3. T
4. Tested initially and after any design or process changes that may affect these parameters.
OH
OL
IH
IL
IN
OUT
Parameter
Θ
Θ
A
IL
is the “Instant On” case temperature.
(min.) = –2.0V and V
JA
JC
Parameter
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[2]
[4]
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Supply Current
Automatic CE
Power Down Current —TTL
Inputs
Automatic CE
Power Down Current
—CMOS Inputs
[2]
......................................–0.5V to V
Description
CC
...................................–0.5V to V
CC
IH
Operating
(max) = V
Relative to GND
Description
Input Capacitance
Output Capacitance
[4]
CC
+ 0.5V for pulse durations of less than 20 ns.
Description
Over the Operating Range
[2]
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51.
[2]
.... –0.5V to +7.0V
V
V
GND < V
GND < V
Output Disabled
V
f = f
Max. V
V
f
Max. V
0.3V, V
or V
MAX
CC
CC
CC
IN
MAX
> V
IN
= Max., I
= Min., I
= Min., I
Test Conditions
< 0.3V, f = 0
CC
CC
CC
CC
IN
IH
= 1/t
I
I
+0.5V
+0.5V
, CE > V
, CE > V
> V
or V
< V
< V
T
V
A
CC
OH
OL
RC
OUT
CC
Conditions
= 25°C, f = 1 MHz,
CC
CC
IN
= 5.0V
= 8.0 mA
= –4.0 mA
,
< V
– 0.3V,
Test
= 0 mA,
IH
CC
IL
Test Conditions
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Commercial
Industrial
Automotive
, f =
Com’l/Ind’l
Auto
Com’l/Ind’l
Auto
Com’l/Ind’l
Auto
Com’l/Ind’l
Auto
Com’l/Ind’l
Auto
L Version
Range
44-pin SOJ
Min.
–0.5
2.4
2.2
–1
–1
Temperature (T
64.32
31.03
–40°C to +125°C
–40°C to +85°C
-12
0°C to +70°C
Ambient
Max.
140
0.4
6.0
0.8
0.5
+1
+1
40
10
Max.
8
8
Min.
–0.5
TSOP-II
A
2.4
2.2
44-pin
–1
–4
–1
–4
76.89
14.28
CY7C1021B
)
[3]
-15
Max.
130
130
0.4
6.0
0.8
0.5
Page 3 of 10
+1
+4
+1
+4
40
50
10
15
5V ± 10%
5V ± 10%
5V ± 10%
Unit
pF
pF
V
CC
°C/W
°C/W
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
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