M25P40-VMN6TPB NUMONYX, M25P40-VMN6TPB Datasheet - Page 38

IC FLASH 4MBIT 75MHZ 8SOIC

M25P40-VMN6TPB

Manufacturer Part Number
M25P40-VMN6TPB
Description
IC FLASH 4MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P40-VMN6TPB

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P40-VMN6TPBTR

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10
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DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristic tables that
follow are derived from tests performed under the Measurement Conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 10.
Table 11.
Table 12.
Table 13.
1. Sampled only, not 100% tested, at T
C
C
Grade 3
Grade 6
Grade 6
Symbol
Symbol
OUT
IN
Device
Erase/Program
Data Retention
Grade
V
T
CC
Parameter
A
cycles
Output capacitance (Q)
Input capacitance (other pins)
Supply voltage
Ambient operating temperature (device grade 6)
Ambient operating temperature (device grade 3)
Operating conditions
Capacitance
Device grade and AC table correlation
Data retention and endurance
2.7V
2.3V
2.7V
Vcc(min)
Parameter
Device grade 6
Device grade 3
at 55°C
150nm Version
(1)
25 MHz
40 MHz
50 MHz
f (max)
Parameter
Condition
A
= 25 °C and a frequency of 25 MHz.
Table 19.
Table 21.
Table 20.
AC Table
Test condition
V
V
OUT
IN
= 0 V
= 0 V
2.7V
2.3V
2.7V
Vcc(min)
100,000
100,000
Min.
20
Min.
–40
–40
2.3
Min.
75 MHz
40 MHz
75 MHz
Max.
f (max)
110nm
Max.
125
3.6
Max.
85
cycles per sector
8
6
Table 22.
Table 21.
Table 22.
AC Table
years
Unit
Unit
Unit
°C
pF
pF
V

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