MT48LC32M8A2P-75 IT:D TR Micron Technology Inc, MT48LC32M8A2P-75 IT:D TR Datasheet - Page 56

IC SDRAM 256MBIT 133MHZ 54TSOP

MT48LC32M8A2P-75 IT:D TR

Manufacturer Part Number
MT48LC32M8A2P-75 IT:D TR
Description
IC SDRAM 256MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48LC32M8A2P-75 IT:D TR

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (32M x 8)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 24: READ-to-WRITE With Extra Clock Cycle
Figure 25: READ-to-PRECHARGE
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Note:
Note:
Command
Command
Command
Address
Address
Address
1. CL = 3. The READ command can be issued to any bank, and the WRITE command can be
1. DQM is LOW.
DQM
CLK
to any bank.
CLK
CLK
DQ
DQ
DQ
Bank a,
Bank a,
Bank,
T0
T0
Col n
T0
READ
Col n
READ
READ
Col
CL = 2
CL = 3
T1
T1
T1
NOP
NOP
NOP
56
T2
T2
T2
NOP
NOP
NOP
D
OUT
Transitioning data
T3
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
NOP
D
D
D
t HZ
OUT
OUT
OUT
PRECHARGE
PRECHARGE
(a or all)
(a or all)
T4
T4
T4
Bank
Bank
NOP
X = 1 cycle
D
D
Transitioning data
256Mb: x4, x8, x16 SDRAM
OUT
OUT
X = 2 cycles
T5
T5
T5
Don’t Care
Bank,
WRITE
Col b
NOP
NOP
D
D
D
OUT
OUT
IN
t DS
t RP
t RP
© 1999 Micron Technology, Inc. All rights reserved.
T6
T6
READ Operation
NOP
NOP
D
OUT
Don’t Care
ACTIVE
Bank a,
ACTIVE
Bank a,
T7
T7
Row
Row

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