BC817-25W /T3 NXP Semiconductors, BC817-25W /T3 Datasheet - Page 5

• Manufacturer Part Number: BC817-25W /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC817-25W /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC817-25W,135

NXP Semiconductors
7. Characteristics
Table 8.
T
[1]
[2]
BC817_BC817W_BC337_6
Product data sheet
Symbol
I
I
h
h
V
V
C
f
CBO
EBO
T
amb
FE
FE
CEsat
BE
c
Pulse test: t
V
= 25
BE
decreases by approximately 2 mV/K with increasing temperature.
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
BC817; BC817W; BC337
BC817-16; BC817-16W;
BC337-16
BC817-25; BC817-25W;
BC337-25
BC817-40; BC817-40W;
BC337-40
Rev. 06 — 17 November 2009
Conditions
I
I
T
I
I
I
I
I
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
C
C
E
C
j
= 0 A; V
= 0 A; V
= 150 °C
= i
= 0 A; V
= 100 mA; V
= 500 mA; V
= 500 mA; I
= 500 mA; V
= 10 mA; V
e
= 0 A; V
CB
CB
EB
= 20 V
= 20 V;
= 5 V
CE
B
CB
CE
CE
CE
= 50 mA
= 5 V;
= 10 V;
= 1 V
= 1 V
= 1 V
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
[1]
[1]
[1]
[2]
Min
-
-
-
100
100
160
250
40
-
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
3
-
© NXP B.V. 2009. All rights reserved.
Max
100
5
100
600
250
400
600
-
700
1.2
-
-
Unit
nA
μA
nA
mV
V
pF
MHz
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