BC817-25W /T3 NXP Semiconductors, BC817-25W /T3 Datasheet - Page 16

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BC817-25W /T3

Manufacturer Part Number
BC817-25W /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC817-25W /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
160 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.5 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC817-25W,135
NXP Semiconductors
9. Packing information
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
BC817_BC817W_BC337_6
Product data sheet
Type number
BC817
BC817W
BC337
BC337
BC337
BC337
For further information and the availability of packing methods, see
Packing methods
Package
SOT23
SOT323
SOT54
SOT54A
SOT54A
SOT 54 variant
Description
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
bulk, straight leads
tape and reel, wide pitch
tape ammopack, wide pitch
bulk, delta pinning (on-circle)
Rev. 06 — 17 November 2009
Section
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
[1]
12.
Packing quantity
3000
-215
-115
-
-
-
-
5000
-412
-
-
-
-
-112
© NXP B.V. 2009. All rights reserved.
10000
-235
-135
-
-116
-126
-
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