BUK765R2-40B /T3 NXP Semiconductors, BUK765R2-40B /T3 Datasheet - Page 3

• Manufacturer Part Number: BUK765R2-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK765R2-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 143 A
• Resistance Drain-source Rds (on): 0.0052 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 56 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 51 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 81 ns
• Part # Aliases: BUK765R2-40B,118

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
BUK765R2-40B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
(A)
I
D
150
100
50
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Capped at 75 A due to package
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
(°C)
R
T
T
pulsed; t
03nj26
Conditions
T
T
see
T
T
I
T
D
j
mb
mb
mb
mb
mb
j(init)
GS
Rev. 3 — 22 November 2011
≥ 25 °C; T
= 75 A; V
200
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 20 kΩ
= 25 °C; unclamped
p
≤ 10 µs; T
sup
j
≤ 175 °C
GS
≤ 40 V; R
GS
Fig 2.
Figure 2
= 10 V; see
= 10 V; see
mb
P
(%)
p
der
120
= 25 °C
≤ 10 µs; see
80
40
GS
0
function of mounting base temperature
Normalized total power dissipation as a
0
= 50 Ω; V
N-channel TrenchMOS standard level FET
Figure
Figure 1
50
Figure 3
GS
1;
= 10 V;
BUK765R2-40B
100
[1]
[2]
[2]
[1]
[2]
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
20
175
175
Max
40
40
143
75
75
573
203
143
75
573
494
03na19
(°C)
200
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
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