SI4880DY-E3 Vishay/Siliconix, SI4880DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4880DY-E3
• Description: MOSFET 30V 13A 2.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4880DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 13 A
• Resistance Drain-source Rds (on): 8.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 30 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 9 ns
• Typical Turn-off Delay Time: 46 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70857
S09-0869-Rev. C, 18-May-09
0.030
0.025
0.020
0.015
0.010
0.005
10
50
40
30
20
10
0
8
6
4
2
0
0
0
0
0
V
I
D
DS
= 13 A
On-Resistance vs. Drain Current
= 15 V
V
10
8
GS
2
V
= 4.5 V
Q
DS
Output Characteristics
g
V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
GS
- Drain Current (A)
Gate Charge
20
16
= 10 V thru 4 V
4
30
24
6
V
GS
40
32
8
3 V
= 10 V
50
40
10
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
40
30
20
10
0
- 50
0
0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
0.5
GS
= 13 A
C
rss
= 10 V
C
6
iss
1.0
V
V
DS
T
0
Transfer Characteristics
GS
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.5
25 °C
T
25
C
C
Capacitance
12
oss
= 125 °C
2.0
50
Vishay Siliconix
2.5
18
75
Si4880DY
3.0
100
www.vishay.com
- 55 °C
3.5
24
125
4.0
150
4.5
30
3