SI4880DY-E3 Vishay/Siliconix, SI4880DY-E3 Datasheet

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SI4880DY-E3

Manufacturer Part Number
SI4880DY-E3
Description
MOSFET 30V 13A 2.5W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4880DY-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13 A
Resistance Drain-source Rds (on)
8.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
30 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
9 ns
Typical Turn-off Delay Time
46 ns
Notes:
a. Surface mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 70857
S09-0869-Rev. C, 18-May-09
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
V
DS
30
G
S
S
S
(V)
1
2
3
4
N-Channel Reduced Q
Top View
SO-8
Si4880DY -T1-E3
Si4880DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.0085 at V
0.014 at V
R
J
a, b
DS(on)
= 150 °C)
8
7
6
5
GS
GS
(Ω)
(Lead (Pb)-free)
= 4.5 V
D
D
D
D
= 10 V
a, b
a
a, b
A
= 25 °C, unless otherwise noted
I
D
± 13
± 10
Steady State
(A)
t ≤ 10 s
T
T
T
T
g
A
A
A
A
, Fast Switching MOSFET
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• High-Efficiency
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
Symbol
Definition
R
thJA
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
N-Channel MOSFET
®
Power MOSFETS
Typical
70
G
- 55 to 150
Limit
± 25
± 13
± 10
± 50
Maximum
2.3
2.5
1.6
30
D
S
50
Vishay Siliconix
Si4880DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4880DY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4880DY -T1-E3 (Lead (Pb)-free) Si4880DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si4880DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 70857 S09-0869-Rev. C, 18-May- 2500 2000 1500 1000 Si4880DY Vishay Siliconix 125 ° °C 25 ° 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C ...

Page 4

... Si4880DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 I 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability ...

Page 5

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 6

... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 7

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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