M58BW16FB5T3T NUMONYX, M58BW16FB5T3T Datasheet - Page 82

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M58BW16FB5T3T

Manufacturer Part Number
M58BW16FB5T3T
Description
IC FLASH 16MBIT 55NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW16FB5T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.3 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW16FB5T3TCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW16FB5T3T
Manufacturer:
Micron Technology Inc
Quantity:
10 000
82/87
Table 33.
Address A0-Amax
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
M58BW32F device geometry definition
Data
1Eh
15h
03h
00h
00h
00h
02h
00h
00h
01h
07h
00h
20h
00h
03h
00h
40h
00h
2
Device interface sync./async.
Organization sync./async.
Maximum number of byte in multi-byte program = 2
Bit7-0 = number of Erase Block regions in device
Number (n-1) of Erase Block regions of identical size;
n = 31
Erase Block region information x 256 bytes per Erase
Block (64 Kbytes)
Number (n-1) of Erase blocks of identical size; n = 8
Erase Block region information x 256 bytes per Erase
Block (8 Kbytes)
Number (n-1) of Erase Block of identical size; n = 8
Erase Block region information x 256 bytes per Erase
block (16 Kbytes)
n
number of bytes memory size
Description
n
4 Mbytes
x 32
Async.
32 bytes
3
62 blocks
512 Kbits
8 blocks
64 Kbits
8 blocks
128 Kbits
Value

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