M58BW16FB5T3T NUMONYX, M58BW16FB5T3T Datasheet - Page 54

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M58BW16FB5T3T

Manufacturer Part Number
M58BW16FB5T3T
Description
IC FLASH 16MBIT 55NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW16FB5T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.3 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW16FB5T3TCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW16FB5T3T
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 21.
54/87
Symbol
t
t
t
t
t
VPHWH
t
t
t
t
t
t
t
t
t
t
t
QVVPL
t
t
DVWH
t
WHDX
WHEH
WHQV
WHWL
WLWH
AVWH
t
WHAX
WHGL
ELWL
LHAX
LLWH
QVPL
AVAV
AVLH
AVLL
ELLL
LLLH
Address Valid to Address Valid
Address Valid to Latch Enable High
Address Valid to Latch Enable Low
Address Valid to Write Enable High
Data Input Valid to Write Enable High
Chip Enable Low to Latch Enable Low
Chip Enable Low to Write Enable Low
Latch Enable High to Address Transition
Latch Enable Low to Latch Enable High
latch Enable Low to Write Enable High
Output Valid to PEN Low
PEN High to Write Enable High
Write Enable High to Address Transition
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Output Enable Low
Write Enable High to Output Valid
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Output Valid to Reset/Power-down Low
Asynchronous Write and Latch controlled Write AC characteristics
Parameter
E = V
E = V
E = V
E = V
E = V
E = V
Test condition
IL
IL
IL
IL
IL
IL
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
150
165
45
45
25
25
10
25
20
25
M58BWxxF
8
0
0
0
5
0
0
0
0
0
0
150
165
55
55
30
30
10
30
20
30
8
0
0
0
5
0
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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