CY7C1320BV18-250BZC Cypress Semiconductor Corp, CY7C1320BV18-250BZC Datasheet - Page 21

• Manufacturer Part Number: CY7C1320BV18-250BZC
• Description: IC SRAM 18MBIT 250MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1320BV18-250BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
AC Electrical Characteristics
Over the Operating Range
Document Number: 38-05621 Rev. *D
I
I
V
V
DD
SB1
Parameter
Parameter
IH
IL
[19]
V
Automatic Power Down
Current
Input HIGH Voltage
Input LOW Voltage
DD
Operating Supply
Description
Description
[12]
[11]
(continued)
V
I
f = f
Max V
Both Ports Deselected,
V
f = f
Inputs Static
OUT
DD
IN
MAX
≥ V
MAX
= Max,
= 0 mA,
DD
IH
= 1/t
= 1/t
,
or V
Test Conditions
Test Conditions
CYC
CYC
IN
≤ V
,
IL
200 MHz
167 MHz
300 MHz
278 MHz
250 MHz
200 MHz
167 MHz
CY7C1316BV18, CY7C1916BV18
CY7C1318BV18, CY7C1320BV18
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
V
REF
Min
Min
–
+ 0.2
Typ
Typ
–
–
V
REF
Max
Max
575
580
600
635
490
490
510
540
315
315
325
350
305
305
315
330
300
300
300
320
285
285
290
300
280
280
285
295
–
– 0.2
Page 21 of 31
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
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